W/Au-GaO肖特基势垒二极管的势垒不均匀性与电学特性

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au -GaO Schottky Barrier Diodes.

作者信息

Xie Lei, Zhang Tao, Xu Shengrui, Su Huake, Tao Hongchang, Gao Yuan, Liu Xu, Zhang Jincheng, Hao Yue

机构信息

State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Shaanxi Engineering Technology and Research Center of High-Power Semiconductor Lighting, Xi'an 710071, China.

出版信息

Micromachines (Basel). 2025 Mar 25;16(4):369. doi: 10.3390/mi16040369.

DOI:10.3390/mi16040369

PMID:40283246

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12029445/

Abstract

In this work, the electrical properties of the GaO Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the -GaO surface resulted in the improvement in the forward characteristics of the W/Au GaO Schottky diode, and the breakdown voltage was significantly enhanced, increasing by 56.25% from 400 V to 625 V after PAA treatment. Additionally, the temperature dependence of barrier heights and ideality factors was analyzed using the thermionic emission (TE) model combined with a Gaussian distribution of barrier heights. Post-annealing reduced the apparent barrier height standard deviation from 112 meV to 92 meV, indicating a decrease in barrier height fluctuations. And the modified Richardson constants calculated for the as-deposited and annealed samples were in close agreement with the theoretical value, demonstrating that the barrier inhomogeneity of the W/Au GaO SBDs can be accurately explained using the TE model with a Gaussian distribution of barrier heights.

摘要

在这项工作中，研究了以W/Au作为肖特基金属的GaO肖特基势垒二极管（SBD）的电学特性。由于450℃的阳极后退火（PAA），-GaO表面的氧空位缺陷减少，导致W/Au GaO肖特基二极管的正向特性得到改善，并且击穿电压显著提高，PAA处理后从400V增加到625V，增幅为56.25%。此外，使用热电子发射（TE）模型结合势垒高度的高斯分布分析了势垒高度和理想因子的温度依赖性。后退火将表观势垒高度标准差从112meV降低到92meV，表明势垒高度波动减小。并且为沉积态和退火态样品计算的修正理查森常数与理论值非常吻合，这表明使用具有势垒高度高斯分布的TE模型可以准确解释W/Au GaO SBD的势垒不均匀性。