机械剥离β-GaO薄膜上Mo/Au肖特基接触的实验与理论研究

Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.

作者信息

Hu Zhuangzhuang, Feng Qian, Feng Zhaoqing, Cai Yuncong, Shen Yixian, Yan Guangshuo, Lu Xiaoli, Zhang Chunfu, Zhou Hong, Zhang Jincheng, Hao Yue

机构信息

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

出版信息

Nanoscale Res Lett. 2019 Jan 3;14(1):2. doi: 10.1186/s11671-018-2837-2.

DOI:10.1186/s11671-018-2837-2

PMID:30607511

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6318155/

Abstract

We studied the reverse current emission mechanism of the Mo/β-GaO Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel-Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-GaO Schottky barrier diode. The effects of the surface states, on the electric field distribution, were also analyzed by TCAD simulation. With the negative surface charge densities increasing, the peak electric field reduces monotonously. Furthermore, the Schottky barrier height inhomogeneity under forward bias was also discussed.

摘要

我们通过研究298至423 K温度范围内与温度相关的电流-电压（I-V）特性，对Mo/β-GaO肖特基势垒二极管的反向电流发射机制进行了研究。反向电流随电场的变化表明，在反向偏置下，肖特基发射是主要的载流子传输机制，而非弗伦克尔-普尔陷阱辅助发射模型。此外，在氟化物环境中，Mo/β-GaO肖特基势垒二极管获得了300 V的击穿电压，平均电场为3 MV/cm。还通过TCAD模拟分析了表面态对电场分布的影响。随着负表面电荷密度增加，峰值电场单调降低。此外，还讨论了正向偏置下肖特基势垒高度的不均匀性。