Takeuchi Kai, Higurashi Eiji
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan.
Micromachines (Basel). 2025 Apr 7;16(4):439. doi: 10.3390/mi16040439.
Effective thermal management is a critical challenge in achieving high-power output for semiconductor laser devices. A key factor in laser device packaging is the bonding between the laser device on a GaAs substrate and a heat spreader, typically composed of high thermal conductivity materials such as SiC. Conventional soldering methods introduce thick bonding layers with relatively low thermal conductivity, resulting in high thermal resistance at the interface. In this study, we demonstrate the room temperature bonding of GaAs and SiC via a 30 nm thick Au layer, eliminating the need for a thermal reaction bonding layer or vacuum process. Using surface-activated bonding (SAB), GaAs and SiC were successfully bonded, with a strength comparable to bulk fracture. A uniform and ultrathin Au bonding interface significantly reduces thermal resistance compared to conventional soldering methods. These results highlight the potential of SAB with thin Au films as a promising approach for improving thermal management in high-power semiconductor laser devices.
有效的热管理是实现半导体激光器件高功率输出的一项关键挑战。激光器件封装中的一个关键因素是砷化镓衬底上的激光器件与通常由诸如碳化硅等高导热率材料构成的散热器之间的键合。传统的焊接方法会引入具有相对较低热导率的厚键合层，从而在界面处产生高的热阻。在本研究中，我们展示了通过30纳米厚的金层实现砷化镓和碳化硅的室温键合，无需热反应键合层或真空工艺。使用表面激活键合（SAB），砷化镓和碳化硅成功键合，其强度与体断裂相当。与传统焊接方法相比，均匀且超薄的金键合界面显著降低了热阻。这些结果突出了使用薄金膜的表面激活键合作为改善高功率半导体激光器件热管理的一种有前景方法的潜力。
