Loizos Michalis, Chatzimanolis Konstantinos, Anagnostou Katerina, Rogdakis Konstantinos, Kymakis Emmanuel
Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete Greece.
Institute of Emerging Technologies, University Research and Innovation Center (HMU), Heraklion 71410, Crete Greece.
ACS Appl Electron Mater. 2025 Apr 4;7(8):3610-3619. doi: 10.1021/acsaelm.5c00516. eCollection 2025 Apr 22.
High-performance halide-based perovskite memory devices have been developed, exhibiting a variety of synaptic and neuronal functions based on nonvolatile and volatile or threshold switching memristors, respectively, compatible with low power consumption. However, the key ingredient in these perovskite-based systems is the presence of highly toxic lead, which hinders their further development and commercial use. A lead-free perovskite approach for memristive applications could enable sustainable devices, opening the path for practical applications. Herein, we report on the fabrication and characterization of a threshold resistive switching device using solution-based manufacturing, based on a lead-free, all-inorganic perovskite, namely cesium-bismuth iodide (CsBiI) perovskite. The memristive device exhibits threshold switching current-voltage (I-V) characteristics with an ON/OFF ratio of >10, while operating in the 0 V-5 V range and exhibiting a cycling endurance of 650 cycles with reproducible behavior. Furthermore, linear long-term, threshold-dependent potentiation protocols, accompanied by abrupt resistance suppression under depression protocols, are demonstrated. The volatile nature of memristive switching allowed the implementation of current spiking activation, similar to neuron spiking protocols, thus opening the path for neuronal emulation. These results can further advance the development of environmentally friendly perovskite memory systems for neuromorphic computing applications, providing a cost-effective alternative to oxide-based devices.
高性能卤化物基钙钛矿存储器件已被开发出来，分别基于非易失性和易失性或阈值开关忆阻器展现出各种突触和神经元功能，且功耗较低。然而，这些基于钙钛矿的系统的关键成分是存在剧毒的铅，这阻碍了它们的进一步发展和商业应用。用于忆阻应用的无铅钙钛矿方法可以实现可持续的器件，为实际应用开辟道路。在此，我们报告了一种基于无铅全无机钙钛矿，即碘化铯铋（CsBiI）钙钛矿，采用溶液法制造的阈值电阻开关器件的制备和表征。该忆阻器件在0 V至5 V范围内工作时，呈现出阈值开关电流-电压（I-V）特性，开/关比大于10，循环耐久性为650次循环，且行为具有可重复性。此外，还展示了线性长期、阈值依赖性增强协议，以及在抑制协议下伴随的突然电阻抑制。忆阻开关的易失性使得能够实现类似于神经元尖峰协议的电流尖峰激活功能，从而为神经元模拟开辟了道路。这些结果可以进一步推动用于神经形态计算应用的环保型钙钛矿存储系统的发展，为基于氧化物的器件提供一种经济高效的替代方案。
