对沉积在含有银纳米颗粒的硅衬底上的锑化镓微岛的研究。

Investigation of GaSb Microislands Deposited on Si Substrates with Ag Nanoparticles.

作者信息

Donchev Vesselin, Kirilov Kiril, Milanova Malina, Vitanov Petko, Dikov Hristosko, Jaffré Alexandre, Ralova Pavlina, Elenkin Petko

机构信息

Faculty of Physics, Sofia University, 5, blvd. J.Bourchier, Sofia BG-1164, Bulgaria.

Central Laboratory of Applied Physics, Bulgarian Academy of Sciences, 61 Sanct Petersburg Blvd, Plovdiv 4000, Bulgaria.

出版信息

ACS Omega. 2025 Apr 9;10(15):15351-15357. doi: 10.1021/acsomega.4c11478. eCollection 2025 Apr 22.

DOI:10.1021/acsomega.4c11478

PMID:40290912

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12019480/

Abstract

We report our investigation of GaSb islands grown on Si substrates using the thermal evaporation method with Ag nanoparticles as catalysts. The size of the structures was determined via atomic force microscopy and scanning electron microscopy. GaSb islands, with an average size of 1.37 ± 1 μm, were formed at an evaporation temperature of 800 °C. X-ray diffraction spectra confirm that the islands are single crystals with a (111) crystallographic orientation, further supported by Raman spectroscopy. Photoluminescence spectra at 80 K include contributions from both band-to-band transitions and transitions related to Ag acceptors. The photoresponse observed through surface photovoltage spectroscopy originates from both GaSb microstructures and free Si surface regions.

摘要

我们报告了使用以银纳米颗粒为催化剂的热蒸发方法在硅衬底上生长锑化镓岛的研究。通过原子力显微镜和扫描电子显微镜确定了结构的尺寸。在800℃的蒸发温度下形成了平均尺寸为1.37±1μm的锑化镓岛。X射线衍射光谱证实这些岛是具有(111)晶体取向的单晶，拉曼光谱进一步支持了这一点。80K下的光致发光光谱包括带间跃迁和与银受主相关的跃迁的贡献。通过表面光电压光谱观察到的光响应来自锑化镓微结构和自由硅表面区域。