• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

对沉积在含有银纳米颗粒的硅衬底上的锑化镓微岛的研究。

Investigation of GaSb Microislands Deposited on Si Substrates with Ag Nanoparticles.

作者信息

Donchev Vesselin, Kirilov Kiril, Milanova Malina, Vitanov Petko, Dikov Hristosko, Jaffré Alexandre, Ralova Pavlina, Elenkin Petko

机构信息

Faculty of Physics, Sofia University, 5, blvd. J.Bourchier, Sofia BG-1164, Bulgaria.

Central Laboratory of Applied Physics, Bulgarian Academy of Sciences, 61 Sanct Petersburg Blvd, Plovdiv 4000, Bulgaria.

出版信息

ACS Omega. 2025 Apr 9;10(15):15351-15357. doi: 10.1021/acsomega.4c11478. eCollection 2025 Apr 22.

DOI:10.1021/acsomega.4c11478
PMID:40290912
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12019480/
Abstract

We report our investigation of GaSb islands grown on Si substrates using the thermal evaporation method with Ag nanoparticles as catalysts. The size of the structures was determined via atomic force microscopy and scanning electron microscopy. GaSb islands, with an average size of 1.37 ± 1 μm, were formed at an evaporation temperature of 800 °C. X-ray diffraction spectra confirm that the islands are single crystals with a (111) crystallographic orientation, further supported by Raman spectroscopy. Photoluminescence spectra at 80 K include contributions from both band-to-band transitions and transitions related to Ag acceptors. The photoresponse observed through surface photovoltage spectroscopy originates from both GaSb microstructures and free Si surface regions.

摘要

我们报告了使用以银纳米颗粒为催化剂的热蒸发方法在硅衬底上生长锑化镓岛的研究。通过原子力显微镜和扫描电子显微镜确定了结构的尺寸。在800℃的蒸发温度下形成了平均尺寸为1.37±1μm的锑化镓岛。X射线衍射光谱证实这些岛是具有(111)晶体取向的单晶,拉曼光谱进一步支持了这一点。80K下的光致发光光谱包括带间跃迁和与银受主相关的跃迁的贡献。通过表面光电压光谱观察到 的光响应来自锑化镓微结构和自由硅表面区域。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/489997d6755d/ao4c11478_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/eee04f9a7811/ao4c11478_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/aa936be37dd3/ao4c11478_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/a36ee84644b3/ao4c11478_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/778ca36bb956/ao4c11478_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/e4c481f7ef9a/ao4c11478_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/e4029dd3cd46/ao4c11478_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/a0a7a251b012/ao4c11478_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/646f9c7ab8f8/ao4c11478_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/489997d6755d/ao4c11478_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/eee04f9a7811/ao4c11478_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/aa936be37dd3/ao4c11478_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/a36ee84644b3/ao4c11478_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/778ca36bb956/ao4c11478_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/e4c481f7ef9a/ao4c11478_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/e4029dd3cd46/ao4c11478_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/a0a7a251b012/ao4c11478_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/646f9c7ab8f8/ao4c11478_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1779/12019480/489997d6755d/ao4c11478_0009.jpg

相似文献

1
Investigation of GaSb Microislands Deposited on Si Substrates with Ag Nanoparticles.对沉积在含有银纳米颗粒的硅衬底上的锑化镓微岛的研究。
ACS Omega. 2025 Apr 9;10(15):15351-15357. doi: 10.1021/acsomega.4c11478. eCollection 2025 Apr 22.
2
An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots.对II型自组装GaSb/GaAs量子点中激子行为的研究。
Nanotechnology. 2016 Feb 12;27(6):065602. doi: 10.1088/0957-4484/27/6/065602. Epub 2015 Dec 18.
3
Temperature dependence of the photoluminescence from ensembles of amorphous silicon nanoparticles with various average sizes.具有不同平均尺寸的非晶硅纳米颗粒集合体的光致发光的温度依赖性。
J Nanosci Nanotechnol. 2011 Feb;11(2):959-65. doi: 10.1166/jnn.2011.3103.
4
Bandgap Modulation of Glancing Angle Deposition Aided Ag Nanoparticles Covered TiO₂ Thin Film by High Temperature Annealing.通过高温退火对掠角沉积辅助的银纳米颗粒覆盖的二氧化钛薄膜进行带隙调制
J Nanosci Nanotechnol. 2020 Dec 1;20(12):7636-7643. doi: 10.1166/jnn.2020.18575.
5
Growth of Molybdenum Trioxide Nanoribbons on Oriented Ag and Au Nanostructures: A Scanning Electron Microscopy (SEM) Study.在定向银和金纳米结构上生长三氧化钼纳米带:扫描电子显微镜(SEM)研究
Microsc Microanal. 2019 Dec;25(6):1449-1456. doi: 10.1017/S1431927619014648.
6
Effect of Ag Thin Films on the Photoluminescence of ZnO Films.银薄膜对氧化锌薄膜光致发光的影响。
J Nanosci Nanotechnol. 2015 May;15(5):3796-801. doi: 10.1166/jnn.2015.9538.
7
Structural and electronic properties of ZnO nanoparticles grown on p-Si and Al2O3 substrates by using spin coating and thermal treatment.
J Nanosci Nanotechnol. 2008 Oct;8(10):5208-11. doi: 10.1166/jnn.2008.1198.
8
Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.通过分子束外延在硅上生长的氮化镓薄膜的光学、结构和同步辐射X射线吸收研究。
Materials (Basel). 2024 Jun 14;17(12):2921. doi: 10.3390/ma17122921.
9
Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy.通过固相外延在Si(001)上形成连续的超薄GaSb薄膜。
Nanomaterials (Basel). 2018 Nov 28;8(12):987. doi: 10.3390/nano8120987.
10
Raman spectroscopy of n-type and p-type GaSb with multiple excitation wavelengths.具有多种激发波长的n型和p型锑化镓的拉曼光谱
Appl Spectrosc. 2007 Oct;61(10):1093-102. doi: 10.1366/000370207782217789.

本文引用的文献

1
Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays.基于有序硫钝化锑化镓纳米线阵列的近红外偏振图像传感器
ACS Nano. 2022 May 24;16(5):8128-8140. doi: 10.1021/acsnano.2c01455. Epub 2022 May 5.
2
Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors.迈向p沟道场效应晶体管的超高空穴迁移率
Small. 2021 Sep;17(37):e2102323. doi: 10.1002/smll.202102323. Epub 2021 Jul 19.
3
Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors.
用于高速红外光电探测器的锡催化锑化镓纳米线的超高空穴迁移率
Nano Lett. 2019 Sep 11;19(9):5920-5929. doi: 10.1021/acs.nanolett.9b01503. Epub 2019 Aug 9.
4
Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.通过金属有机化学气相沉积法在InAs茎上自催化生长垂直GaSb纳米线
Nanoscale Res Lett. 2017 Dec;12(1):428. doi: 10.1186/s11671-017-2207-5. Epub 2017 Jun 26.
5
Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.高效、可调谐的倒装芯片集成III-V族/硅混合外腔激光器阵列。
Opt Express. 2016 Sep 19;24(19):21454-62. doi: 10.1364/OE.24.021454.
6
Approaching the Hole Mobility Limit of GaSb Nanowires.逼近 GaSb 纳米线的空穴迁移率极限。
ACS Nano. 2015 Sep 22;9(9):9268-75. doi: 10.1021/acsnano.5b04152. Epub 2015 Aug 24.
7
Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires.表面活性剂辅助的高性能小直径 GaSb 纳米线化学气相沉积。
Nat Commun. 2014 Oct 16;5:5249. doi: 10.1038/ncomms6249.
8
Perfect crystals grown from imperfect interfaces.从非完美界面生长出的完美晶体。
Sci Rep. 2013;3:2276. doi: 10.1038/srep02276.
9
Scaling hetero-epitaxy from layers to three-dimensional crystals.从层状到三维晶体的异质外延缩放。
Science. 2012 Mar 16;335(6074):1330-4. doi: 10.1126/science.1217666.