Lin Shiyun, Zheng Xuezhe, Yao Jin, Djordjevic Stevan S, Cunningham John E, Lee Jin-Hyoung, Shubin Ivan, Luo Ying, Bovington Jock, Lee Daniel Y, Thacker Hiren D, Raj Kannan, Krishnamoorthy Ashok V
Opt Express. 2016 Sep 19;24(19):21454-62. doi: 10.1364/OE.24.021454.
We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.
我们首次展示了一种表面法线耦合的可调谐混合硅激光器阵列,采用了被动对准、高精度倒装芯片键合技术。一个集成了全内反射镜的2×6 III-V族反射半导体光放大器(RSOA)阵列与一个带有光栅耦合器和硅环反射器的CMOS SOI芯片键合,形成一个可调谐混合外腔激光器阵列。所有12个激光器均实现了2%的波导耦合壁插效率(wcWPE)和3 mW的输出功率。我们通过减小金属/介质堆叠的厚度进一步提高了性能,采用相同的集成技术实现了10 mW的输出功率和5%的wcWPE。这种非侵入性的一步式线后端(BEOL)集成方法为未来大规模光子集成电路的高密度激光源提供了一个有前景的解决方案。