Geldasa Fikadu Takele, Dejene Francis Birhanu
Department of Chemical and Physical Sciences, Walter Sisulu University, Private Bag X1, Mthatha 5117, South Africa.
Materials (Basel). 2025 Apr 8;18(8):1688. doi: 10.3390/ma18081688.
This study explores the effects of sulfur (S) doping and oxygen vacancy (OV) creation on the fundamental properties of TiO, which plays a crucial role in photocatalysis applications. Using density functional theory (DFT + U), we investigate how S doping and OV impact the structural, electronic, mechanical, and optical properties of rutile TiO. The structural results reveal that the lattice constants of undoped rutile TiO are a = b = 4.63 Å and c = 2.98 Å, which are consistent with reported values. Upon S doping at concentrations of 6.25%, 12.5%, and 18.75%, the lattice constants expand to a = b = 4.89 Å, 5.14 Å, and 5.31 Å, and c = 3.27 Å, 3.69 Å, and 3.82 Å, respectively. This expansion is attributed to the difference in atomic radii between sulfur and oxygen atoms. In contrast, the presence of OV leads to a reduction in the lattice constants, with values of a = b = 4.17 Å and c = 2.82 Å. Our findings on the electronic properties indicate that both S doping and OV contribute to an improvement in the electronic structure, notably shifting the electronic bandgap toward the visible spectrum. Moreover, the mechanical properties show that S doping increases the material's rigidity, while the introduction of OV results in a reduction of mechanical strength. This highlights a trade-off between improved photocatalytic activity and material durability. Lastly, the optical properties exhibit a red-shift in absorption due to S doping and the formation of OV, offering valuable insights for designing efficient photocatalysts for visible-light-driven applications.
本研究探讨了硫(S)掺杂和氧空位(OV)的产生对TiO基本性质的影响,TiO在光催化应用中起着关键作用。使用密度泛函理论(DFT + U),我们研究了S掺杂和OV如何影响金红石型TiO的结构、电子、力学和光学性质。结构结果表明,未掺杂的金红石型TiO的晶格常数为a = b = 4.63 Å和c = 2.98 Å,与报道值一致。当S掺杂浓度分别为6.25%、12.5%和18.75%时,晶格常数分别扩展到a = b = 4.89 Å、5.14 Å和5.31 Å,c = 3.27 Å、3.69 Å和3.82 Å。这种扩展归因于硫和氧原子之间的原子半径差异。相比之下,OV的存在导致晶格常数减小,值为a = b = 4.17 Å和c = 2.82 Å。我们关于电子性质的研究结果表明,S掺杂和OV都有助于改善电子结构,特别是将电子带隙向可见光谱方向移动。此外,力学性质表明,S掺杂增加了材料的刚性,而OV的引入导致机械强度降低。这突出了在提高光催化活性和材料耐久性之间的权衡。最后,光学性质表现出由于S掺杂和OV的形成而导致的吸收红移,为设计用于可见光驱动应用的高效光催化剂提供了有价值的见解。