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基于密度泛函理论研究的S掺杂和氧空位对用于光催化应用的金红石型TiO物理性质的影响

Effects of S Doping and Oxygen Vacancy on the Physical Properties of Rutile TiO for Photocatalysis Applications Based on Density Functional Theory Study.

作者信息

Geldasa Fikadu Takele, Dejene Francis Birhanu

机构信息

Department of Chemical and Physical Sciences, Walter Sisulu University, Private Bag X1, Mthatha 5117, South Africa.

出版信息

Materials (Basel). 2025 Apr 8;18(8):1688. doi: 10.3390/ma18081688.

Abstract

This study explores the effects of sulfur (S) doping and oxygen vacancy (OV) creation on the fundamental properties of TiO, which plays a crucial role in photocatalysis applications. Using density functional theory (DFT + U), we investigate how S doping and OV impact the structural, electronic, mechanical, and optical properties of rutile TiO. The structural results reveal that the lattice constants of undoped rutile TiO are a = b = 4.63 Å and c = 2.98 Å, which are consistent with reported values. Upon S doping at concentrations of 6.25%, 12.5%, and 18.75%, the lattice constants expand to a = b = 4.89 Å, 5.14 Å, and 5.31 Å, and c = 3.27 Å, 3.69 Å, and 3.82 Å, respectively. This expansion is attributed to the difference in atomic radii between sulfur and oxygen atoms. In contrast, the presence of OV leads to a reduction in the lattice constants, with values of a = b = 4.17 Å and c = 2.82 Å. Our findings on the electronic properties indicate that both S doping and OV contribute to an improvement in the electronic structure, notably shifting the electronic bandgap toward the visible spectrum. Moreover, the mechanical properties show that S doping increases the material's rigidity, while the introduction of OV results in a reduction of mechanical strength. This highlights a trade-off between improved photocatalytic activity and material durability. Lastly, the optical properties exhibit a red-shift in absorption due to S doping and the formation of OV, offering valuable insights for designing efficient photocatalysts for visible-light-driven applications.

摘要

本研究探讨了硫(S)掺杂和氧空位(OV)的产生对TiO基本性质的影响,TiO在光催化应用中起着关键作用。使用密度泛函理论(DFT + U),我们研究了S掺杂和OV如何影响金红石型TiO的结构、电子、力学和光学性质。结构结果表明,未掺杂的金红石型TiO的晶格常数为a = b = 4.63 Å和c = 2.98 Å,与报道值一致。当S掺杂浓度分别为6.25%、12.5%和18.75%时,晶格常数分别扩展到a = b = 4.89 Å、5.14 Å和5.31 Å,c = 3.27 Å、3.69 Å和3.82 Å。这种扩展归因于硫和氧原子之间的原子半径差异。相比之下,OV的存在导致晶格常数减小,值为a = b = 4.17 Å和c = 2.82 Å。我们关于电子性质的研究结果表明,S掺杂和OV都有助于改善电子结构,特别是将电子带隙向可见光谱方向移动。此外,力学性质表明,S掺杂增加了材料的刚性,而OV的引入导致机械强度降低。这突出了在提高光催化活性和材料耐久性之间的权衡。最后,光学性质表现出由于S掺杂和OV的形成而导致的吸收红移,为设计用于可见光驱动应用的高效光催化剂提供了有价值的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6eb/12028584/510e39497602/materials-18-01688-g001.jpg

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