Bochenek Dariusz, Brzezińska Dagmara, Niemiec Przemysław, Zubko Maciej, Osińska Katarzyna
Institute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, Poland.
Department of Physics, Faculty of Science, University of Hradec Králové, Rokitanského 62, 500 03 Hradec Králové, Czech Republic.
Materials (Basel). 2025 Apr 13;18(8):1773. doi: 10.3390/ma18081773.
In this work, a multicomponent PZT-type material doped with manganese Mn, antimony Sb, samarium Sm, and tungsten W was fabricated using classical powder technology. Sintering of the ceramic samples was performed by the free sintering method (pressureless sintering). The influence of samarium on the properties of PZT was analyzed using a variable amount of samarium Sm (from 0.8 to 1.2 wt.%) and tungsten W (from 1.4 to 1.2 wt.%) admixture compared to the Pb(ZrTi)MnSbO + W1.8 wt.% reference composition. XRD studies have shown that PZT-type ceramic samples have a tetragonal structure with a point group of P4. Field emission scanning electron micrographs (FE-SEMs) showed fine and properly crystallized grains with an average grain size of 5.65-7.70 μm and clearly visible grain boundaries. The polarization-electric field () hysteresis measurement confirmed the ferroelectric nature of the ceramic materials with high maximum polarization values (from 12.38 to 16.46 μC/cm). Dielectric studies of PZT-type materials have revealed high permittivity values (from 1025 to 1365 at room temperature (RT) and from 18,468 to 25,390 at phase transition temperature ) with simultaneously low tan dielectric loss factor values (from 0.004 to 0.011 at RT) and low DC electrical conductivity, which are important parameters for microelectronic applications. The most homogeneous structure and the most favorable set of utility parameters are represented by the composition with an equal content of Sm and W admixtures, i.e., for 1.2 wt.%.
在本工作中，采用经典粉末技术制备了掺杂锰（Mn）、锑（Sb）、钐（Sm）和钨（W）的多组分PZT型材料。陶瓷样品的烧结采用自由烧结法（无压烧结）。与Pb(ZrTi)MnSbO + W 1.8 wt.%参考成分相比，使用不同量的钐（Sm，从0.8至1.2 wt.%）和钨（W，从1.4至1.2 wt.%）混合物分析了钐对PZT性能的影响。X射线衍射（XRD）研究表明，PZT型陶瓷样品具有点群为P4的四方结构。场发射扫描电子显微镜（FE-SEM）图像显示晶粒细小且结晶良好，平均晶粒尺寸为5.65 - 7.70μm，晶界清晰可见。极化 - 电场（）滞后测量证实了陶瓷材料的铁电性质，具有较高的最大极化值（从12.38至16.46μC/cm）。PZT型材料的介电研究表明，其具有高介电常数（室温（RT）下为1025至1365，相变温度下为18468至25390），同时具有低的tan介电损耗因子值（RT下为0.004至0.011）和低直流电导率，这些都是微电子应用的重要参数。具有相等含量的Sm和W混合物的成分，即1.2 wt.%，表现出最均匀的结构和最有利的一组实用参数。
