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PbZr1-xTixO3中高压电响应的起源。

Origin of the high piezoelectric response in PbZr1-xTixO3.

作者信息

Guo R, Cross LE, Park SE, Noheda B, Cox DE, Shirane G

机构信息

Materials Research Laboratory, Pennsylvania State University, University Park, Pennsylvania 16802-4800, USA.

出版信息

Phys Rev Lett. 2000 Jun 5;84(23):5423-6. doi: 10.1103/PhysRevLett.84.5423.

DOI:10.1103/PhysRevLett.84.5423
PMID:10990959
Abstract

High resolution x-ray powder diffraction measurements on poled PbZr1-xTixO3 (PZT) ceramic samples close to the rhombohedral-tetragonal phase boundary (the so-called morphotropic phase boundary) have shown that for both rhombohedral and tetragonal compositions the piezoelectric elongation of the unit cell does not occur along the polar directions but along those directions associated with the monoclinic distortion. This work provides the first direct evidence for the origin of the very high piezoelectricity in PZT.

摘要

对接近菱方相 - 四方相边界(即所谓的准同型相界)的极化PbZr1 - xTixO3(PZT)陶瓷样品进行的高分辨率X射线粉末衍射测量表明,对于菱方相和四方相组成,晶胞的压电伸长并非沿极性方向发生,而是沿与单斜畸变相关的方向发生。这项工作首次为PZT中极高压电性的起源提供了直接证据。

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