Qin Yue, Song Xuerong, Zhang Hanzhuang, Ji Wenyu, Ning Jiajia
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University Changchun 130012 China
Chem Sci. 2025 Apr 30. doi: 10.1039/d5sc00657k.
Quantum well (QW) structures have been successfully produced and utilized in high-performance optoelectronic devices. By designing QW structures at the nanoscale, it is possible to combine the advantages of both QW structures and nanostructures, resulting in extraordinary properties. In this study, a CuInS (CIS) quantum well layer was successfully constructed within a single nanostructure using a colloidal method. Various QW nanostructures were synthesized, including CdS/CIS/CdS, CdS/CIS/ZnS, ZnS/CIS/CdS, and Cd-free ZnS/CIS/ZnS configurations. The shapes of these QW nanostructures were precisely tuned to form tetrahedrons, hexagonal columns, and rods. Importantly, the morphology and crystal structure of the CIS layer play a crucial role in determining the final morphologies of the QW nanostructures. These QW nanostructures exhibit fluorescence emission in the near-infrared range (NIR), achieving a maximum quantum yield of 37% at 783 nm. This work demonstrates the successful construction of a CIS quantum well layer within a single colloidal nanoparticle, providing a valuable research model for fundamental studies and offering promising materials for optoelectronic devices.
量子阱（QW）结构已成功制备并应用于高性能光电器件中。通过在纳米尺度上设计量子阱结构，可以将量子阱结构和纳米结构的优点结合起来，从而产生非凡的性能。在本研究中，采用胶体法在单个纳米结构中成功构建了CuInS（CIS）量子阱层。合成了各种量子阱纳米结构，包括CdS/CIS/CdS、CdS/CIS/ZnS、ZnS/CIS/CdS和无镉的ZnS/CIS/ZnS构型。这些量子阱纳米结构的形状被精确调整以形成四面体、六方柱和棒状。重要的是，CIS层的形态和晶体结构在决定量子阱纳米结构的最终形态方面起着关键作用。这些量子阱纳米结构在近红外范围（NIR）表现出荧光发射，在783nm处实现了37%的最大量子产率。这项工作展示了在单个胶体纳米颗粒中成功构建CIS量子阱层，为基础研究提供了有价值的研究模型，并为光电器件提供了有前景的材料。
