Wang Yong-Jyun, Chu Li-Lun, Tu Yu-Hao, Tsao Li-Hui, Fan Ming-Kuan, Chen Wei-Ting, Chen Chien-Wei, Chang Chan-Yuen, Chang Yuan-Chih, Chueh Yu-Lun, Chiu Po-Wen, Yeh Chao-Hui, Chu Ying-Hao
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan.
College of Semiconductor Research, National Tsing Hua University, Hsinchu 300044, Taiwan.
Nano Lett. 2025 May 21;25(20):8186-8193. doi: 10.1021/acs.nanolett.5c01164. Epub 2025 May 9.
Bismuth oxychalcogenides (BiOX, where X = S, Se, Te) have garnered significant attention recently due to their high electron mobility, air stability, and excellent photoelectric properties. Therefore, precise control and optimization over the properties of these novel quasi-2D materials are crucial for practical applications. In this study, we synthesize epitaxial films of BiO(S,Se) by the monotonous alloying of sulfur (S) and selenium (Se). Our findings reveal that the lattice constants, band gaps, and electrical properties of the films vary according to the elemental composition. Further, we observed an enhanced field-effect mobility of ∼215 cm/(V s) and an on/off ratio of ∼10 in the BiO(SSe) heterostructures with a BiSeO (BSO) oxide layer. With these efforts, this work establishes a pathway toward developing novel designs for 2D BiOX materials.
氧族铋化物（BiOX，其中X = S、Se、Te）由于其高电子迁移率、空气稳定性和优异的光电性能，近年来受到了广泛关注。因此，对这些新型准二维材料的性能进行精确控制和优化对于实际应用至关重要。在本研究中，我们通过硫（S）和硒（Se）的单调合金化合成了BiO(S,Se)外延薄膜。我们的研究结果表明，薄膜的晶格常数、带隙和电学性能会根据元素组成而变化。此外，我们在具有BiSeO（BSO）氧化物层的BiO(SSe)异质结构中观察到约215 cm/(V s)的增强场效应迁移率和约10的开/关比。通过这些努力，这项工作为开发二维BiOX材料的新设计建立了一条途径。
