Deng Meng, Lu Fan, Gao Ningfei, Pei Tian, Xiu Haojin, Shi Hairan, Fan Zhanchun, Zhang Qi, Xin Xiangjun, Yang Leijing, Wei Nan, Xu Haitao
Beijing Key Laboratory of Space-Ground Interconnection and Convergence, School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China.
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China.
ACS Appl Mater Interfaces. 2025 Jun 18;17(24):35833-35841. doi: 10.1021/acsami.5c01111. Epub 2025 May 10.
With the development of fields such as lunar exploration and automotive technology, the importance of devices suitable for wide-temperature range is increasingly highlighted. Chemically doped devices, represented by silicon, hardly meet wide-temperature-range requirements, as impurities affect transistor operation at both low and high temperatures. Carbon nanotube (CNT) transistors have high- and low-temperature advantages due to their doping-free structure. In this study, we investigated operation in the temperature range of 10 to 473 K of both n- and p-type field-effect transistors based on network carbon nanotube thin film, complementing the research in wide-temperature-range transport characteristics of CNT transistors, and explored the mechanism of the devices. Experimental results demonstrate that compared to other structures, at high temperature, doping-free carbon nanotube field-effect transistors exhibit no intrinsic excitation induced device leakage, maintaining an on-off ratio of over 10 even at 473 K. At low temperature, no carrier freeze-out issues are observed, resulting in a more stable threshold voltage. Those results explore the advantage of the doping-free device in the wide-temperature range scenario, being free from dopant that can affect performance at extreme temperatures, revealing the great potential of carbon-based devices for wide-temperature-range applications.
随着月球探测和汽车技术等领域的发展，适用于宽温度范围的器件的重要性日益凸显。以硅为代表的化学掺杂器件很难满足宽温度范围的要求，因为杂质会在低温和高温下影响晶体管的运行。碳纳米管（CNT）晶体管由于其无掺杂结构而具有高温和低温优势。在本研究中，我们研究了基于网络碳纳米管薄膜的n型和p型场效应晶体管在10至473K温度范围内的运行情况，补充了碳纳米管晶体管宽温度范围传输特性的研究，并探索了器件的机制。实验结果表明，与其他结构相比，在高温下，无掺杂碳纳米管场效应晶体管不会出现本征激发引起的器件泄漏，即使在473K时也能保持超过10的开/关比。在低温下，未观察到载流子冻结问题，从而导致阈值电压更加稳定。这些结果探索了无掺杂器件在宽温度范围情况下的优势，不受可在极端温度下影响性能的掺杂剂的影响，揭示了碳基器件在宽温度范围应用中的巨大潜力。
