Wu Han, Shu Lincong, Zhang Qinghua, Sha Shulin, Liu Zeng, Li Shan, Yan Sihan, Tang Weihua, Wang Yuehui, Wu Zhenping, Lin Kun, Li Qiang, Miao Jun, Xing Xianran
Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Adv Mater. 2025 Jul;37(29):e2412717. doi: 10.1002/adma.202412717. Epub 2025 May 9.
Wide bandgap semiconductors have emerged as a class of deep-ultraviolet sensitive materials, showing great potentials for next-generation integrated devices. Yet, to achieve a high photoresponse of deep-ultraviolet detector without complicated designs at low supply voltage and weak light intensity is challenging. Herein, a new way is designed to fabricate an ultrasensitive vertical-structured photodetector with epitaxial 7 nm BaTiO interlayer and 10 nm GaO photosensitive layer, realizing the detection to a rare weak deep UV light intensity (0.1 µW cm ) at a voltage under 4.8 V and demonstrating a surge in responsivity up to 1.1 A W with ultrafast response of 0.24 µs/33.4 µs (rise/decay). A responsivity of 3.8 mA W at 0 V also has been reached. The dark current is suppressed by enlarged conduction band offset and meanwhile the photocurrent is enhanced by unidirectional conducting valance band offset, which formed by BaTiO interlayer. BaTiO also contributes most to the photoresponse at 0 V through its ferroelectric depolarization electric field. These results provide a path toward high-sensitive, low-power-consumption, and highly-integrated deep-ultraviolet detection, beyond conventional ones.
宽带隙半导体已成为一类深紫外敏感材料，在下一代集成器件中显示出巨大潜力。然而，在低电源电压和弱光强度下，无需复杂设计就能实现深紫外探测器的高光响应具有挑战性。在此，设计了一种新方法来制造具有外延7纳米钛酸钡中间层和10纳米氧化镓光敏层的超灵敏垂直结构光电探测器，实现了在4.8伏以下电压下对罕见的微弱深紫外光强度（0.1微瓦/平方厘米）的探测，并展示了高达1.1安/瓦的响应率激增，超快响应时间为0.24微秒/33.4微秒（上升/下降）。在0伏时也达到了3.8毫安/瓦的响应率。暗电流通过扩大导带偏移得到抑制，同时光电流通过由钛酸钡中间层形成的单向传导价带偏移得到增强。钛酸钡还通过其铁电极化电场在0伏时对光响应贡献最大。这些结果为超越传统探测器的高灵敏度、低功耗和高度集成的深紫外探测提供了一条途径。
