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用于增强储钠性能的 ZnSeTe 负极材料中的孪晶结构和替代掺杂剂工程

Engineering twin structures and substitutional dopants in ZnSeTe anode material for enhanced sodium storage performance.

作者信息

Zong Jingui, Liang Yazhan, Liu Fan, Zhang Mingzhe, Song Kepeng, Feng Jinkui, Xi Baojuan, Xiong Shenglin

机构信息

School of Chemistry and Chemical Engineering, Shandong University, Jinan, China.

School of Materials Science and Engineering, Shandong University, Jinan, China.

出版信息

Nat Commun. 2025 May 12;16(1):4406. doi: 10.1038/s41467-025-59707-0.

Abstract

Compared with lithium-ion batteries (LIBs), sodium-ion batteries (SIBs) are an alternative technology for future energy storage due to their abundant resources and economic benefits. Constructing various defects is considered to be a common viable means of improving the performance of sodium storage. However, it is of significance to thoroughly scrutinize the formation mechanism of defects and their effects and transition during the charge-discharge process. Here, twin structures are introduced into ZnSeTe nanocrystals by doping of Te heteroatoms. The Te dopants are visualized to locate in the lattices of ZnSe by spherical aberration electron microscopy. The formation of twin structures is thermodynamically promoted by Te heteroatoms partially replacing Se based on the theoretical calculation results. Moreover, calculation results show that with the increase of twin boundaries (TBs), the sodium diffusion energy barrier is greatly reduced, which helps the kinetics of sodium ion diffusion. In the connection, the composition and amount of TBs are optimized via tuning the doping level. The combined effect of point defects and twin structures greatly improves the sodium storage performance of ZnSeTe@C. Our work reveals the mechanism of the point defect on the twin plane defect and systematically investigates their effect on the electrochemical performance.

摘要

与锂离子电池(LIBs)相比,钠离子电池(SIBs)因其资源丰富和经济效益而成为未来储能的替代技术。构建各种缺陷被认为是提高储钠性能的一种常见可行方法。然而,深入研究缺陷的形成机制及其在充放电过程中的影响和转变具有重要意义。在此,通过掺杂碲(Te)杂原子将孪晶结构引入到ZnSeTe纳米晶体中。通过球差电子显微镜观察到Te掺杂剂位于ZnSe的晶格中。基于理论计算结果,Te杂原子部分取代Se在热力学上促进了孪晶结构的形成。此外,计算结果表明,随着孪晶界(TBs)的增加,钠扩散能垒大大降低,这有助于钠离子扩散动力学。在此基础上,通过调整掺杂水平优化了TBs的组成和数量。点缺陷和孪晶结构的综合作用极大地提高了ZnSeTe@C的储钠性能。我们的工作揭示了孪晶面上点缺陷的机制,并系统地研究了它们对电化学性能的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8b7d/12069564/8c79d1714cf3/41467_2025_59707_Fig1_HTML.jpg

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