Yuan Ziyi, Bakhit Babak, Liu Yi-Xuan, Sun Zhuotong, I Lampronti Giulio, Li Xinjuan, Fairclough Simon M, Tsai Benson K, Choudhury Abhijeet, Ducati Caterina, Wang Haiyan, Hellenbrand Markus, MacManus-Driscoll Judith L
Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, UK.
Electrical Engineering Division, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0FA, UK.
Sci Adv. 2025 May 16;11(20):eadt9789. doi: 10.1126/sciadv.adt9789.
Resistive switching devices are promising candidates for the next generation of nonvolatile memory and neuromorphic computing applications. Despite the advantages in retention and on/off ratio, filamentary-based memristors still suffer from challenges, particularly endurance (flash being a benchmark system showing 10 to 10 cycles) and uniformity. Here, we use WO as a complementary metal-oxide semiconductor-compatible switching oxide and demonstrate a proof-of-concept materials design approach to enhance endurance and device-to-device uniformity in WO-based memristive devices while preserving other performance metrics. These devices show stable resistive switching behavior with >10 cycles, >10-second retention, >10 on/off ratio, and good device-to-device uniformity, without using current compliance. All these metrics are achieved using a one-step pulsed laser deposition process to create self-assembled nanocomposite thin films that have regular guided filaments of ≈100-nanometer pitch, preformed between WO grains and interspersed smaller CeO grains.
电阻开关器件是下一代非易失性存储器和神经形态计算应用的有前途的候选者。尽管在保持性和开/关比方面具有优势,但基于细丝的忆阻器仍然面临挑战,特别是耐久性(闪存作为基准系统显示10到10次循环)和均匀性。在这里,我们使用WO作为与互补金属氧化物半导体兼容的开关氧化物,并展示了一种概念验证材料设计方法,以提高基于WO的忆阻器件的耐久性和器件间均匀性,同时保留其他性能指标。这些器件在不使用电流依从性的情况下,显示出具有>10次循环、>10秒保持性、>10开/关比的稳定电阻开关行为以及良好的器件间均匀性。所有这些指标都是通过一步脉冲激光沉积工艺实现的,该工艺可创建自组装纳米复合薄膜,这些薄膜在WO晶粒之间具有间距约为100纳米的规则引导细丝,并散布着较小的CeO晶粒。