Hu Zhida, Hu Shun, Zhang Minghao, Wu Wenshuo, Fan Shuangqing, Su Jie
College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.
College of Electronic and Information Engineering, Qingdao University, Qingdao 266071, People's Republic of China.
Nanotechnology. 2025 May 28;36(23). doi: 10.1088/1361-6528/adda51.
Inspired by the human visual perception system, optoelectronic devices have attracted growing interest in advanced machine vision systems. Despite significant advancements in optical sensors, the synergy between optoelectronics remains underdeveloped. In this study, we propose a transistor fabricated via magnetron sputtering of indium-gallium-zinc oxide (In: Ga: Zn = 1:1:1 mol%) that serves as an inhibitory device, simulating key biological synaptic functions through its electrical properties, including excitatory postsynaptic currents and paired-pulse facilitation. Furthermore, by exploiting the intrinsic photoresponse characteristics of IGZO and the short-term and long-term memory behaviors induced by optical stimulation, we simulate synapses modulated by light of varying wavelengths. As a phototransistor, this device successfully simulates complex synaptic behaviors, including Morse code. It also simulates the Mach bands, a phenomenon of lateral inhibition observed in biology. Additionally, the optoelectronic effect of the phototransistor is applied in neural network recognition, achieving a recognition rate of 85.8%.
受人类视觉感知系统的启发，光电器件在先进的机器视觉系统中引起了越来越多的关注。尽管光学传感器取得了重大进展，但光电子学之间的协同作用仍未得到充分发展。在本研究中，我们提出了一种通过磁控溅射铟镓锌氧化物（In:Ga:Zn = 1:1:1摩尔%）制造的晶体管，该晶体管用作抑制器件，通过其电学特性模拟关键的生物突触功能，包括兴奋性突触后电流和双脉冲易化。此外，通过利用IGZO的固有光响应特性以及光刺激诱导的短期和长期记忆行为，我们模拟了由不同波长的光调制的突触。作为一种光电晶体管，该器件成功地模拟了包括莫尔斯电码在内的复杂突触行为。它还模拟了马赫带，这是一种在生物学中观察到的侧抑制现象。此外，该光电晶体管的光电效应应用于神经网络识别，实现了85.8%的识别率。
