Das Kamal, Zhao Yufei, Yan Binghai
Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel.
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Nano Lett. 2025 Jun 11;25(23):9189-9196. doi: 10.1021/acs.nanolett.5c00195. Epub 2025 May 27.
The van der Waals (vdW) antiferromagnet CrSBr has recently garnered significant attention due to its air stability, high magnetic transition temperature, and semiconducting properties. We investigate its nonlinear transport properties and identify a quantum-metric-dipole (QMD)-induced nonlinear anomalous Hall effect and nonlinear longitudinal resistivity, which switch signs upon reversing the Néel vector. The significant QMD originates from Dirac nodal lines near the conduction band edge within the experimentally achievable doping range. Knowing the weak interlayer coupling, it is unexpected that the nonlinear conductivities do not scale with the sample thickness but are dominantly contributed by surface layers. In the electron-doped region, the top layer dominates the response, while the top three layers contribute the most in the hole-doped region. Our results establish topological nodal lines as a guiding principle to design high-performance nonlinear quantum materials, and we suggest that surface-sensitive transport devices will provide new avenues for nonlinear electronic applications.
范德瓦尔斯(vdW)反铁磁体CrSBr最近因其空气稳定性、高磁转变温度和半导体特性而备受关注。我们研究了其非线性输运特性,并确定了一种由量子度量偶极子(QMD)诱导的非线性反常霍尔效应和非线性纵向电阻率,它们在奈尔矢量反转时会改变符号。显著的QMD源于实验可实现的掺杂范围内导带边缘附近的狄拉克节线。考虑到层间耦合较弱,非线性电导率不随样品厚度缩放而是主要由表面层贡献,这是出乎意料的。在电子掺杂区域,顶层主导响应,而在空穴掺杂区域,顶层的三层贡献最大。我们的结果确立了拓扑节线作为设计高性能非线性量子材料的指导原则,并且我们认为表面敏感的输运器件将为非线性电子应用提供新途径。