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通过原位椭偏仪探测TAPC/CBP/BPhen有机发光二极管堆栈中的相变和界面重组

Probing Phase Transitions and Interfacial Reorganization in TAPC/CBP/BPhen Organic Light-Emitting Diode Stacks by In Situ Ellipsometry.

作者信息

Aulika Ilze, Paulsone Patricija, Oras Sven, Butikova Jelena, Zommere Margarita Anna, Laizane Elina, Vembris Aivars

机构信息

Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV-1063 Riga, Latvia.

Institute of Technology, University of Tartu, Nooruse 1, 50411 Tartu, Estonia.

出版信息

Materials (Basel). 2025 May 13;18(10):2261. doi: 10.3390/ma18102261.

Abstract

The thermal behavior of a three-layer structure-glass/ITO/TAPC/CBP/BPhen-in an OLED system was investigated using in situ spectroscopic ellipsometry during controlled heating from room temperature to 120 °C over 60 min, simulating the ageing process and analyzing degradation kinetics. Variations in Ψ and Δ spectra were observed across the entire 0.7-5.9 eV spectral range, with five distinct anomalies, particularly in the UV region. An anomaly at approximately 66 °C was attributed to the glass transition temperature of BPhen, while another two at around 82 °C and at around 112 °C corresponded to the first-order phase transition of TAPC and of CBP, respectively. The origins of the remaining anomalies at 91 °C and 112 °C were explored in this study, with a focus on interphase layer formation and morphological changes that emerge during heating. These findings provide insights into the stability of OLEDs under thermal stress.

摘要

在一个OLED系统中,使用原位光谱椭偏仪研究了三层结构玻璃/ITO/TAPC/CBP/BPhen在从室温到120°C的60分钟受控加热过程中的热行为,模拟老化过程并分析降解动力学。在整个0.7 - 5.9 eV光谱范围内观察到Ψ和Δ光谱的变化,有五个明显的异常,特别是在紫外区域。大约66°C处的异常归因于BPhen的玻璃化转变温度,而另外两个分别在82°C左右和112°C左右的异常分别对应于TAPC和CBP的一级相变。本研究探讨了91°C和112°C处其余异常的起源,重点关注加热过程中出现的界面层形成和形态变化。这些发现为OLED在热应力下的稳定性提供了见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dedc/12113155/274f7559cfb8/materials-18-02261-g001.jpg

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