Trindade Gustavo F, Sul Soohwan, Kim Joonghyuk, Havelund Rasmus, Eyres Anya, Park Sungjun, Shin Youngsik, Bae Hye Jin, Sung Young Mo, Matjacic Lidija, Jung Yongsik, Won Jungyeon, Jeon Woo Sung, Choi Hyeonho, Lee Hyo Sug, Lee Jae-Cheol, Kim Jung-Hwa, Gilmore Ian S
National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
Nat Commun. 2023 Dec 6;14(1):8066. doi: 10.1038/s41467-023-43840-9.
Understanding the degradation mechanism of organic light-emitting diodes (OLED) is essential to improve device performance and stability. OLED failure, if not process-related, arises mostly from chemical instability. However, the challenges of sampling from nanoscale organic layers and interfaces with enough analytical information has hampered identification of degradation products and mechanisms. Here, we present a high-resolution diagnostic method of OLED degradation using an Orbitrap mass spectrometer equipped with a gas cluster ion beam to gently desorb nanometre levels of materials, providing unambiguous molecular information with 7-nm depth resolution. We chemically depth profile and analyse blue phosphorescent and thermally-activated delayed fluorescent (TADF) OLED devices at different degradation levels. For OLED devices with short operational lifetimes, dominant chemical degradation mainly relate to oxygen loss of molecules that occur at the interface between emission and electron transport layers (EML/ETL) where exciton distribution is maximised, confirmed by emission zone measurements. We also show approximately one order of magnitude increase in lifetime of devices with slightly modified host materials, which present minimal EML/ETL interfacial degradation and show the method can provide insight for future material and device architecture development.
了解有机发光二极管(OLED)的降解机制对于提高器件性能和稳定性至关重要。OLED的失效,如果不是与工艺相关的,大多源于化学不稳定性。然而,从纳米级有机层和界面进行采样并获取足够的分析信息面临挑战,这阻碍了对降解产物和机制的识别。在此,我们提出一种用于OLED降解的高分辨率诊断方法,该方法使用配备气体团簇离子束的轨道阱质谱仪,以温和地解吸纳米级别的材料,提供具有7纳米深度分辨率的明确分子信息。我们对处于不同降解水平的蓝色磷光和热激活延迟荧光(TADF)OLED器件进行化学深度剖析和分析。对于具有较短工作寿命的OLED器件,主要的化学降解主要与分子的氧损失有关,这种氧损失发生在发射层和电子传输层(EML/ETL)之间的界面处,此处激子分布最大,这一点通过发射区测量得到证实。我们还表明,对主体材料进行轻微改性的器件寿命增加了约一个数量级,这些器件的EML/ETL界面降解最小,这表明该方法可为未来的材料和器件架构开发提供见解。