Liao Wei-Cheng, Liu Haoyu, Tan Weilun, Keagy Josiah, Chen Jia-Mou, Shi Jing
Department of Physics and Astronomy, University of California, Riverside, California 92521, United States.
Nano Lett. 2025 Jun 18;25(24):9794-9800. doi: 10.1021/acs.nanolett.5c02181. Epub 2025 Jun 2.
Electrical transport measurements in heterostructures of antiferromagnetic CrO bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of CrO undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single-domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications.
在反铁磁CrO块状晶体与薄铂层的异质结构中进行的电输运测量显示,当CrO的奈尔矢量经历自旋翻转转变时,会出现尖锐的响应。这种突然变化可能源于几种不同的机制,包括磁致伸缩、近邻诱导反常霍尔效应、自旋霍尔反常霍尔效应和自旋霍尔平面霍尔效应。虽然能够感应多个上下磁畴的大型铂器件由于不同的初始奈尔矢量取向会产生难以区分的霍尔信号跳跃,但能够感应单个磁畴的较小铂器件则能分离出近邻诱导的霍尔信号。这使得在单磁畴区域中能够直接通过电检测自旋翻转转变过程中奈尔矢量的重新取向。此外,单磁畴状态可以通过磁场冷却或磁电冷却来制备。我们展示了一种通过利用霍尔测量和冷却技术来控制和表征单磁畴奈尔矢量三维取向的方法,这对于未来的反铁磁自旋电子学应用至关重要。