Han Lei, Fu Xizhi, Peng Rui, Cheng Xingkai, Dai Jiankun, Liu Liangyang, Li Yidian, Zhang Yichi, Zhu Wenxuan, Bai Hua, Zhou Yongjian, Liang Shixuan, Chen Chong, Wang Qian, Chen Xianzhe, Yang Luyi, Zhang Yang, Song Cheng, Liu Junwei, Pan Feng
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Department of Physics, Hong Kong University of Science and Technology, Hong Kong 999077, China.
Sci Adv. 2024 Jan 26;10(4):eadn0479. doi: 10.1126/sciadv.adn0479.
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1." However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet MnSi. Such a 180° switching is read out by the Néel vector-induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
反铁磁自旋电子学因其在构建适用于现代高性能信息技术的超密集、超快反铁磁存储器方面的巨大潜力而备受关注。奈尔矢量的电180°切换是开发以相反奈尔矢量作为二进制“0”和“1”的电控反铁磁存储器的长期目标。然而，目前的反铁磁切换机制长期以来一直局限于奈尔矢量的90°或120°切换，这不可避免地需要多个写入通道，这与超密集集成相矛盾。在此，我们提出了一种基于具有不对称能垒的自旋轨道转矩的确定性切换机制，并通过实验实现了自旋分裂反铁磁体MnSi的电180°切换。这种180°切换通过奈尔矢量诱导的反常霍尔效应读出。基于我们的写入和读出方法，我们制造了一种具有电控高阻态和低阻态的反铁磁器件，该器件实现了稳健的写入和读取循环。除了基本进展外，我们的工作还推动了基于自旋分裂反铁磁体的实用自旋分裂反铁磁器件的发展。
