Cheng Xingrui, Thurn Andreas, Chen Guangzhao, Jones Gareth S, Bennett James E, Coke Maddison, Adshead Mason, Michaels Cathryn P, Balci Osman, Ferrari Andrea C, Atatüre Mete, Curry Richard J, Smith Jason M, Salter Patrick S, Gangloff Dorian A
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.
Department of Engineering Science, University of Oxford, Parks Road, Oxford, OX1 3PJ, UK.
Nat Commun. 2025 Jun 2;16(1):5124. doi: 10.1038/s41467-025-60373-5.
Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.
基于金刚石中IV族色心的自旋-光子界面为量子网络提供了一个很有前景的平台。该领域的一个关键挑战是实现精确的单缺陷定位和激活，这对于可扩展器件制造至关重要。在这里，我们通过展示一种用于锡空位（SnV）中心的两步制造方法来解决这个问题，该方法使用位点控制离子注入，然后进行局部飞秒激光退火并进行原位光谱监测。离子注入的分辨率低于50纳米，剂量可从每个位点数百个离子控制到单个离子，受泊松统计限制。使用这种方法，我们成功地展示了单SnV中心的位点选择性创建和修饰。我们的原位光谱监测为单缺陷水平的材料调谐打开了一扇窗口，并为退火过程中的缺陷结构和动力学提供了新的见解。虽然是针对SnV中心进行演示的，但这种通用方法可以很容易地推广到金刚石和宽带隙材料中的其他注入色心。
