Liu Wenfeng, Zhang Yang, Chen Changqing, Xu Weiqiang, Zeng Qin, Yang Weihuang, Chen Yiwen, Zhang Zheling, Wang Dongjie, Zhang Jian
School of Materials Science and Engineering, School of Optoelectronic Engineering, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 1st Jinji Road, Guilin, 541004, P. R. China.
Small. 2025 Jul;21(27):e2503174. doi: 10.1002/smll.202503174. Epub 2025 Jun 4.
Defects at grain boundaries and energy level mismatch at the perovskite film/carbon electrode interface in printable mesoscopic perovskite solar cells (p-MPSCs) lead to non-radiative carrier recombination and large open-circuit voltage (V) losses. Herein, a method for post-treating perovskite films in p-MPSCs at room-temperature using halogen-free aromatic amines, including Benzylamine (BA), 1-Naphthalenemethylamine (NMA), and 1-Naphthalenecarboximidamide (NFA), is reported. The halogen-free aromatic amines prevent the formation of iodine vacancy defects in perovskite films by interacting with under-coordinated Pb, significantly reducing the trap state density of the perovskite films. Meanwhile, the halogen-free aromatic amines can form low-dimensional perovskites with type II energy level alignment at the perovskite film/carbon electrode interface, which significantly suppresses non-radiative recombination of interfacial carriers and reduces V loss. As a result, the champion power conversion efficiency (PCE) of p-MPSCs based on NFA room-temperature post-treatment is improved from 17.51% in control devices to 20.27%, and the V is increased from 0.975 V in control devices to 1.049 V. Furthermore, the unencapsulated p-MPSCs retained more than 95% of their initial PCE after being stored in air for 3500 h. The halogen-free room-temperature post-treatment provides a simple and green approach for preparing high-efficiency and stable p-MPSCs.
可印刷介观钙钛矿太阳能电池(p-MPSC)中,晶界处的缺陷以及钙钛矿薄膜/碳电极界面处的能级不匹配会导致非辐射载流子复合以及较大的开路电压(V)损失。在此,报道了一种在室温下使用无卤芳香胺对p-MPSC中的钙钛矿薄膜进行后处理的方法,这些无卤芳香胺包括苄胺(BA)、1-萘甲胺(NMA)和1-萘甲脒(NFA)。无卤芳香胺通过与配位不足的Pb相互作用,防止钙钛矿薄膜中碘空位缺陷的形成,显著降低了钙钛矿薄膜的陷阱态密度。同时,无卤芳香胺可以在钙钛矿薄膜/碳电极界面形成具有II型能级排列的低维钙钛矿,这显著抑制了界面载流子的非辐射复合并降低了V损失。结果,基于NFA室温后处理的p-MPSC的最佳功率转换效率(PCE)从对照器件中的17.51%提高到了20.27%,V从对照器件中的0.975 V提高到了1.049 V。此外,未封装的p-MPSC在空气中储存3500小时后,仍保留了其初始PCE的95%以上。无卤室温后处理为制备高效且稳定的p-MPSC提供了一种简单且绿色的方法。