Chen Yingying, Ma Zheng, Zhao Na, Li Yajun, Yao Xi, Dou Xilong
College of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan, Hubei 432000, China.
School of Automobile, Chang'an University, Xi'an, Shaanxi 710064, China.
Phys Chem Chem Phys. 2025 Jun 18;27(24):12919-12928. doi: 10.1039/d5cp01499a.
Magnesium-based Zintl-phase compounds are outstanding among the high performance thermoelectric material candidates for their better flexibility, non-toxicity and low-cost. Recently, we have noted an experiment that synthesized a new thermoelectric material-monolayer MgBi-with an ultralow lattice thermal conductivity of = 0.21 W m K at room temperature; however, the cause of this remains untraced. By employing a first-principles approach coupled with the Boltzmann transport equation, we herein present a deep understanding of the fundamental mechanisms responsible for the ultralow lattice thermal conductivity in monolayer MgBi, unveiling that this is attributed to the soft Mg3-Bi1 bonds that introduce flat phonons in the acoustic branch along the - direction in the first Brillouin zone, and in turn decrease the velocity of sound and strengthen anharmonicity and scattering rates of phonons. Additionally, the analysis of the electronic structure reveals the characteristics of multiple transport valleys that boost the large Seebeck coefficient of 140 μV K, as observed in electrical transport calculations. Consequently, we identify the figure of merit () of 0.48 at 800 K in n-type monolayer MgBi. Our findings shed light on the microscopic origins of the lattice thermal conductivity and provide key indicators for searching for high performance thermoelectric materials in the Mg-Bi system.
镁基津特相化合物在高性能热电材料候选物中表现突出,因其具有更好的柔韧性、无毒且成本低。最近,我们注意到一项实验合成了一种新型热电材料——单层MgBi,其在室温下具有超低的晶格热导率 = 0.21 W m K;然而,其原因仍未找到。通过采用第一性原理方法并结合玻尔兹曼输运方程,我们在此深入理解了单层MgBi中超低晶格热导率的基本机制,揭示这归因于软的Mg3 - Bi1键,这些键在第一布里渊区沿 - 方向的声学支中引入了平坦声子,进而降低了声速并增强了声子的非谐性和散射率。此外,电子结构分析揭示了多个输运谷的特征,这促进了在电输运计算中观察到的140 μV K的大塞贝克系数。因此,我们确定n型单层MgBi在800 K时的优值()为0.48。我们的发现揭示了晶格热导率的微观起源,并为在Mg - Bi体系中寻找高性能热电材料提供了关键指标。