• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于光电子学的大面积电沉积在石墨烯电极上的二硒化钨

Large-Area Electrodeposited WSe over Graphene Electrodes for Optoelectronics.

作者信息

Zhang Jiapei, Thomas Shibin, Muhammad Mustafa Ahmad Nizamuddin, Greenacre Victoria, Zhelev Nikolay, Ali Syeda Ramsha, Han Yisong, Song Shaokai, Zhang Hongwei, Graham Aiden, Abdelazim Nema M, Ramadan Sami, Beanland Richard, Reid Gillian, Bartlett Philip N, de Groot Kees, Noori Yasir J

机构信息

School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom.

School of Chemistry and Chemical Engineering, University of Southampton, Southampton SO17 1BJ, United Kingdom.

出版信息

ACS Appl Nano Mater. 2025 May 16;8(21):10842-10850. doi: 10.1021/acsanm.4c07346. eCollection 2025 May 30.

DOI:10.1021/acsanm.4c07346
PMID:40469894
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12131223/
Abstract

Integrating graphene and transition metal dichalcogenides (TMDs) into layered material heterostructures brings together the exciting properties that each constituent 2D material offers. However, scaling the growth of graphene-TMD and related heterostructures remains a major challenge. In this work, we demonstrate the use of electrodeposition with a single source precursor (SSP), WSeCl, to grow few-layer WSe using graphene as an electrode. Through characterization via photoluminescence, X-ray photoelectron, and Raman spectroscopy, we show that the electrodeposited WSe is stoichiometric and exhibits semiconducting and light-emitting properties. TEM imaging was also performed to show the ordering of the stacked layers of WSe over graphene, demonstrating the polycrystalline structure of WSe. This work paves the way toward utilizing electrodeposition to stack multiple TMDs, including MoS, WS, and WSe over graphene for electronic and optoelectronic applications.

摘要

将石墨烯和过渡金属二卤化物(TMDs)整合到层状材料异质结构中,汇集了每种二维组成材料所具有的令人兴奋的特性。然而,扩大石墨烯-TMD及相关异质结构的生长规模仍然是一项重大挑战。在这项工作中,我们展示了使用单源前驱体(SSP)WSeCl进行电沉积,以石墨烯作为电极来生长少层WSe。通过光致发光、X射线光电子能谱和拉曼光谱进行表征,我们表明电沉积的WSe是化学计量的,并表现出半导体和发光特性。还进行了透射电子显微镜成像,以显示WSe在石墨烯上堆叠层的有序性,证明了WSe的多晶结构。这项工作为利用电沉积在石墨烯上堆叠包括MoS、WS和WSe在内的多种TMD用于电子和光电子应用铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/bc3d0ee937a3/an4c07346_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/4ca21a7ee30c/an4c07346_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/e1b9026e8f65/an4c07346_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/3309e7269b01/an4c07346_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/f4263bb96a6e/an4c07346_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/775c71cab095/an4c07346_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/bc3d0ee937a3/an4c07346_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/4ca21a7ee30c/an4c07346_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/e1b9026e8f65/an4c07346_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/3309e7269b01/an4c07346_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/f4263bb96a6e/an4c07346_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/775c71cab095/an4c07346_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e73/12131223/bc3d0ee937a3/an4c07346_0006.jpg

相似文献

1
Large-Area Electrodeposited WSe over Graphene Electrodes for Optoelectronics.用于光电子学的大面积电沉积在石墨烯电极上的二硒化钨
ACS Appl Nano Mater. 2025 May 16;8(21):10842-10850. doi: 10.1021/acsanm.4c07346. eCollection 2025 May 30.
2
Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.过渡金属二卤化物及其以外的单层和少层纳米片的合成、性质和应用。
Acc Chem Res. 2015 Jan 20;48(1):56-64. doi: 10.1021/ar5002846. Epub 2014 Dec 9.
3
Few-Layer WS-WSe Lateral Heterostructures: Influence of the Gas Precursor Selenium/Tungsten Ratio on the Number of Layers.少层WS-WSe横向异质结构:气体前驱体硒/钨比例对层数的影响。
ACS Nano. 2022 Jan 25;16(1):1198-1207. doi: 10.1021/acsnano.1c08979. Epub 2021 Dec 20.
4
Large-Area Electrodeposition of Few-Layer MoS on Graphene for 2D Material Heterostructures.用于二维材料异质结构的石墨烯上少层MoS的大面积电沉积
ACS Appl Mater Interfaces. 2020 Nov 4;12(44):49786-49794. doi: 10.1021/acsami.0c14777. Epub 2020 Oct 20.
5
Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.基于单层二硒化钨和石墨烯的原子层状异质结构。
Nano Lett. 2014 Dec 10;14(12):6936-41. doi: 10.1021/nl503144a. Epub 2014 Nov 17.
6
Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material.二维过渡金属二卤族化合物的声子和拉曼散射:从单层、多层到体材料。
Chem Soc Rev. 2015 May 7;44(9):2757-85. doi: 10.1039/c4cs00282b. Epub 2015 Feb 13.
7
Multilayer Graphene-WSe Heterostructures for WSe Transistors.多层石墨烯-二硒化钨异质结构用于二硒化钨晶体管。
ACS Nano. 2017 Dec 26;11(12):12817-12823. doi: 10.1021/acsnano.7b07755. Epub 2017 Dec 1.
8
The van der Waals interaction and absorption and electron circular dichroism spectra of two-dimensional bilayer stacked structures.二维双层堆叠结构的范德华相互作用、吸收光谱和电子圆二色光谱
Spectrochim Acta A Mol Biomol Spectrosc. 2023 Dec 15;303:123182. doi: 10.1016/j.saa.2023.123182. Epub 2023 Jul 22.
9
Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium-Assisted CVD Strategy.通过铵辅助化学气相沉积策略实现二维过渡金属二硫属化物垂直异质结构的稳健生长。
Adv Mater. 2024 Nov;36(46):e2408367. doi: 10.1002/adma.202408367. Epub 2024 Sep 19.
10
Role of Bilayer Graphene Microstructure on the Nucleation of WSe Overlayers.双层石墨烯微结构对 WSe 覆盖层成核的作用。
ACS Nano. 2023 Jul 11;17(13):12140-12150. doi: 10.1021/acsnano.2c12621. Epub 2023 Jun 27.

本文引用的文献

1
Self-Driven Gr/WSe/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts.基于非对称肖特基范德华接触的高性能自驱动Gr/WSe₂/Gr光电探测器
ACS Appl Mater Interfaces. 2023 Dec 13;15(49):57868-57878. doi: 10.1021/acsami.3c14331. Epub 2023 Nov 28.
2
Single-Photon Emission from Two-Dimensional Materials, to a Brighter Future.二维材料的单光子发射,迈向更光明的未来。
J Phys Chem Lett. 2023 Apr 6;14(13):3274-3284. doi: 10.1021/acs.jpclett.2c03674. Epub 2023 Mar 28.
3
Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide.
分子束外延生长和二维层状材料在外延石墨烯/碳化硅上的扫描隧道显微镜研究。
Nanotechnology. 2023 Jan 17;34(13). doi: 10.1088/1361-6528/acae28.
4
High-temperature flexible WSe photodetectors with ultrahigh photoresponsivity.具有超高光响应性的高温柔性硒化钨光电探测器。
Nat Commun. 2022 Jul 28;13(1):4372. doi: 10.1038/s41467-022-32062-0.
5
Site-selective growth of two-dimensional materials: strategies and applications.二维材料的位点选择性生长:策略与应用
Nanoscale. 2022 Jul 21;14(28):9946-9962. doi: 10.1039/d2nr02093a.
6
Tungsten(VI) selenide tetrachloride, WSeCl - synthesis, properties, coordination complexes and application of [WSeCl(SeBu)] for CVD growth of WSe thin films.四氯硒化钨(VI),WSeCl - [WSeCl(SeBu)]的合成、性质、配位络合物及其在WSe薄膜化学气相沉积生长中的应用
Dalton Trans. 2022 Feb 8;51(6):2400-2412. doi: 10.1039/d1dt03980f.
7
Tungsten disulfide thin films electrodeposition from a single source precursor.二硫化钨薄膜的单源前驱体电沉积法。
Chem Commun (Camb). 2021 Oct 5;57(79):10194-10197. doi: 10.1039/d1cc03297f.
8
Enhancing Structural Properties and Performance of Graphene-Based Devices Using Self-Assembled HMDS Monolayers.使用自组装六甲基二硅氮烷单层增强基于石墨烯的器件的结构性能和性能。
ACS Omega. 2021 Feb 9;6(7):4767-4775. doi: 10.1021/acsomega.0c05631. eCollection 2021 Feb 23.
9
Large-Area Electrodeposition of Few-Layer MoS on Graphene for 2D Material Heterostructures.用于二维材料异质结构的石墨烯上少层MoS的大面积电沉积
ACS Appl Mater Interfaces. 2020 Nov 4;12(44):49786-49794. doi: 10.1021/acsami.0c14777. Epub 2020 Oct 20.
10
Light-matter interactions in two-dimensional layered WSe for gauging evolution of phonon dynamics.二维层状WSe中用于测量声子动力学演化的光与物质相互作用。
Beilstein J Nanotechnol. 2020 May 12;11:782-797. doi: 10.3762/bjnano.11.63. eCollection 2020.