Panfil Yossef E, Thompson Sarah M, Chen Gary, Ng Jonah J, Kagan Cherie R, Bassett Lee C
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
ACS Nano. 2025 Jun 17;19(23):21400-21410. doi: 10.1021/acsnano.5c01265. Epub 2025 Jun 5.
We report room-temperature observations of Cu-V quantum emitters in individual ZnS:Cu nanocrystals (NCs). Using time-gated imaging, we isolate the distinct ∼3-μs-long, red photoluminescence (PL) emission of Cu-V defects, enabling their precise identification and statistical characterization. The emitters exhibit distinct blinking and photon antibunching, consistent with individual NCs containing two to four Cu-V defects. The quantum emitters' PL spectra show a pronounced blue shift compared to NC dispersions, likely due to photochemical and charging effects. Emission polarization measurements of quantum emitters are consistent with a σ-character optical dipole transition and the symmetry of the Cu-V defect. These observations motivate further investigation of Cu-V defects in ZnS NCs for use in quantum technologies.
我们报告了在单个ZnS:Cu纳米晶体(NCs)中对Cu-V量子发射器的室温观测结果。通过时间选通成像,我们分离出了Cu-V缺陷独特的约3微秒长的红色光致发光(PL)发射,从而能够对其进行精确识别和统计表征。这些发射器表现出明显的闪烁和光子反聚束现象,这与单个NCs中含有两到四个Cu-V缺陷相一致。与NCs分散体相比,量子发射器的PL光谱显示出明显的蓝移,这可能是由于光化学和充电效应所致。量子发射器的发射偏振测量结果与σ特性光学偶极跃迁以及Cu-V缺陷的对称性相一致。这些观测结果促使人们进一步研究ZnS NCs中的Cu-V缺陷在量子技术中的应用。