Center for Nano and Biophotonics and Physics and Chemistry of Nanostructures, Ghent University , Ghent 9000, Belgium.
Nano Lett. 2017 Oct 11;17(10):6104-6109. doi: 10.1021/acs.nanolett.7b02634. Epub 2017 Sep 14.
Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency ("blinking"), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.
胶体核/壳 InP/ZnSe 量子点(QDs),最近采用改进的合成方法制备,在生命科学应用以及集成量子光子学和量子信息处理中单光子发射器方面具有很大的潜力。3.2nm 核的 10nm QDs 的单粒子光谱显示出归因于多激子快速(70ps)俄歇复合的强光子反聚束。在强光激发下,QDs 表现出非常好的光稳定性。我们证明,当 QDs 被激发到基激子跃迁的饱和强度以上时,反聚束仍然存在。这一结果为在室温下作为高纯度按需单光子发射器使用铺平了道路。与通常情况不同的是,尽管存在很强的俄歇阻塞机制,InP/ZnSe QDs 也显示出非常小的发光间歇(“闪烁”),具有简单的开/关闪烁模式。对单粒子发光统计的分析将这些 InP/ZnSe QDs 置于几乎无闪烁 QDs 类别中,与最先进的厚壳和合金界面 CdSe/CdS 的发射稳定性相当,但单光子纯度更高。