Zhou Boyu, Zhou Mingming, Zhang Tong, Xie Shiyi, Jiang Yuhan, Chang Zongming, Wang Yanping, Tao Youtian, Zhang Dingke, Mi Xiaoyun, Liu Xiuling
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China.
Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, People's Republic of China.
ACS Appl Mater Interfaces. 2025 Jun 18;17(24):35705-35713. doi: 10.1021/acsami.5c03725. Epub 2025 Jun 5.
Quantum-dot light-emitting diodes (QLEDs) are regarded as promising options for various optoelectronic applications. However, they struggle with an excessive injection of electrons relative to holes, constraining their performance. Here, we propose an efficient hole transport layer (HTL) sensitization method that can reuse leaked electrons and raise the hole transport capability to tackle this challenge. The HTL consists of poly(9-vinylcarbazole) (PVK) mixed with a light-blue thermally activated delayed fluorescence emitter, 2-(3,5-bis(trifluoromethyl)phenyl)-5-(2,3,4,5,6-penta(9-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (dCF5CzOXD). The resulting red QLEDs at a mixing concentration of 25 wt % simultaneously yield a highest current efficiency/external quantum efficiency (EQE) of 42.3 cd A/35.8%, and an extended lifetime exceeding 81,408 h at 100 cd m, positioning them among the most efficient and stable QLEDs reported to date. Remarkably, a consistent EQE value exceeding 32.0% is maintained across a broad luminance range of 9000 to 200,000 cd m.