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挥发性三(-烷氧基甲酰胺基)铬(III)配合物的制备及其性质——作为用于化学气相沉积结晶氧化铬薄膜的潜在单源前驱体

The Preparation and Properties of Volatile Tris(‑Alkoxycarboxamidato)chromium(III) Complexes as Potential Single-Source Precursors for the MOCVD of Crystalline Chromium Oxide Thin Films.

作者信息

Kim Ji Hun, Song Da Som, Shin Sunyoung, Ryu Ji Yeon, Jung Duk-Young, Lim Jongsun, Kim Chang Gyoun

机构信息

Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea.

Department of Chemistry and Sungkyun Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.

出版信息

ACS Omega. 2025 May 20;10(21):21519-21528. doi: 10.1021/acsomega.5c00380. eCollection 2025 Jun 3.

Abstract

The synthesis, characterization, and vapor-phase growth of volatile Cr-(III) complexes as single-source precursors for CrO thin films are reported. A series of Cr complexesCr-(mdpa) (mdpa = -methoxy-2,2-dimethylpropanamide) (), Cr-(edpa) (edpa = -ethoxy-2,2-dimethylpropanamide) (), Cr-(empa) (empa = -ethoxy-2-methylpropanamide) (), and Cr-(mpa) (mpa = -methoxypropanamide) ()were synthesized via salt elimination reactions between CrCl·3THF and -alkoxy carboxamidate salts. These complexes were characterized by Fourier transform infrared spectroscopy, elemental analysis, thermogravimetric analysis (TGA), single-crystal X-ray diffraction (SC-XRD), Hirshfeld surface analysis, powder X-ray diffraction (PXRD), and vapor pressure measurement. The crystal structure of complex revealed a distorted octahedral geometry with a κ (O,O) binding mode. TGA demonstrated that complex underwent weight loss at 132 °C and no residue remained at 500 °C. The enthalpy of vaporization of was estimated to be 25.58 kJ/mol, making it an optimal precursor for CrO thin films. The XRD patterns of CrO films deposited on SiO/Si substrates confirmed their crystalline nature, showing prominent peaks at 2θ = 33.5° and 41.5°. In addition, X-ray photoelectron spectroscopy validated the target Cr/O ratio, supporting the successful formation of CrO films.

摘要

报道了挥发性Cr-(III)配合物作为CrO薄膜单源前驱体的合成、表征及气相生长。通过CrCl·3THF与-烷氧基氨基甲酸盐之间的盐消除反应合成了一系列Cr配合物Cr-(mdpa)(mdpa = -甲氧基-2,2-二甲基丙酰胺)()、Cr-(edpa)(edpa = -乙氧基-2,2-二甲基丙酰胺)()、Cr-(empa)(empa = -乙氧基-2-甲基丙酰胺)()和Cr-(mpa)(mpa = -甲氧基丙酰胺)()。通过傅里叶变换红外光谱、元素分析、热重分析(TGA)、单晶X射线衍射(SC-XRD)、Hirshfeld表面分析、粉末X射线衍射(PXRD)和蒸气压测量对这些配合物进行了表征。配合物的晶体结构显示出扭曲的八面体几何结构,具有κ(O,O)键合模式。TGA表明配合物在132℃时失重,在500℃时无残留。的蒸发焓估计为25.58 kJ/mol,使其成为CrO薄膜的最佳前驱体。沉积在SiO/Si衬底上的CrO薄膜的XRD图谱证实了它们的晶体性质,在2θ = 33.5°和41.5°处显示出明显的峰。此外,X射线光电子能谱验证了目标Cr/O比,支持了CrO薄膜的成功形成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8370/12138604/55414a7aac79/ao5c00380_0009.jpg

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