Aronson Benjamin L, Kelley Kyle P, Gunay Ece, Mercer Ian, Dryzhakov Bogdan, Maria Jon-Paul, Dickey Elizabeth C, Trolier-McKinstry Susan, Ihlefeld Jon F
Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381, United States.
Nano Lett. 2025 Jun 18;25(24):9748-9754. doi: 10.1021/acs.nanolett.5c02005. Epub 2025 Jun 9.
Conformal deposition of wurtzite ferroelectrics, which is needed for their use in scaled nonvolatile memories, is challenging using current physical vapor deposition techniques. To overcome the conformality barrier, this work demonstrates ferroelectricity in wurtzite ZnMgO thin films prepared by plasma-enhanced atomic layer deposition, which is a non-line-of-sight deposition method. Films ranging in composition from = 0.00 to = 0.58 are predominantly wurtzite phase and exhibit a (0001)-texture. Increasing the magnesium content decreases the / ratio, increases the optical bandgap energy, increases the piezoelectric response, and enables polarization reversal. Clear polarization switching is demonstrated in 50 nm thick ZnMgO films by piezoresponse force microscopy in compositions containing = 0.46 and = 0.58.
纤锌矿铁电体的保形沉积对于其在缩放非易失性存储器中的应用至关重要，但使用当前的物理气相沉积技术来实现这一点具有挑战性。为了克服保形性障碍，本工作展示了通过等离子体增强原子层沉积制备的纤锌矿ZnMgO薄膜中的铁电性，这是一种非视线沉积方法。成分范围从x = 0.00到x = 0.58的薄膜主要为纤锌矿相，并呈现(0001)织构。增加镁含量会降低c/a比率，增加光学带隙能量，增加压电响应，并实现极化反转。通过压电力显微镜在含有x = 0.46和x = 0.58的成分的50 nm厚ZnMgO薄膜中证明了清晰的极化切换。
