Chen Jiahao, Shi Zhanfeng, Kuai Yue, Xu Yingtian, Liu Heng, Zhang He, Lan Yunping
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, People's Republic of China.
Changchun University of Science and Technology Chongqing Research Institute, Chongqing 400000, People's Republic of China.
ACS Appl Mater Interfaces. 2025 Jun 25;17(25):36934-36942. doi: 10.1021/acsami.5c06272. Epub 2025 Jun 11.
Highly two-dimensional π-conjugated metal-organic framework (MOFs) films have attracted significant attention in optoelectronics due to their excellent charge transport properties, strong light absorption, and tunable molecular structures. Compared with conventional inorganic two-dimensional materials, π-conjugated MOF offer greater structural diversity, enhanced optical absorption, and more tunable charge transport pathways, all of which contribute to improved photoelectric conversion efficiency and overall device performance. However, the generation of photocurrent in two-dimensional π-conjugated MOFs is challenging due to their short carrier lifetime. Expanding the application of MOFs films in the field of optoelectronics is therefore worth exploring. In this study, a π-conjugated conductive Ni(HITP) film was prepared using an air-liquid interface growth method and integrated with n-Si to fabricate a p-n junction self-powered photodetector. The built-in electric field of the p-n junction was used to extend the carrier lifetime, while the broadband high absorption of Ni(HITP) was utilized to broaden the operating range of the silicon-based detector. This photodetector exhibits ultrahigh speed (rise time of 5.9 μs, fall time of 64 μs), high responsivity (0.618 A/W), and high quantum efficiency (94%). Additionally, theoretical calculations revealed a low barrier between Ni(HITP) and n-Si, contributing to the device's fast response. This study presents a new approach to high-performance π-conjugated MOFs hybrid optoelectronics through the development of Ni(HITP)-based photodetectors.
高度二维的π共轭金属有机框架（MOF）薄膜因其优异的电荷传输特性、强光吸收能力和可调节的分子结构，在光电子学领域引起了广泛关注。与传统的无机二维材料相比，π共轭MOF具有更大的结构多样性、增强的光吸收以及更可调节的电荷传输途径，所有这些都有助于提高光电转换效率和整体器件性能。然而，由于二维π共轭MOF的载流子寿命较短，在其中产生光电流具有挑战性。因此，拓展MOF薄膜在光电子学领域的应用值得探索。在本研究中，采用气液界面生长法制备了π共轭导电Ni(HITP)薄膜，并将其与n-Si集成，以制造一个p-n结自供电光电探测器。利用p-n结的内建电场来延长载流子寿命，同时利用Ni(HITP)的宽带高吸收特性来拓宽基于硅的探测器的工作范围。该光电探测器具有超高速（上升时间为5.9 μs，下降时间为64 μs）、高响应度（0.618 A/W）和高量子效率（94%）。此外，理论计算表明Ni(HITP)与n-Si之间的势垒较低，这有助于器件的快速响应。本研究通过开发基于Ni(HITP)的光电探测器，为高性能π共轭MOF混合光电子学提供了一种新方法。
