Liao Lin, Su Xianli, Luo Hao, Wen Xili, Dai Yin, Liu Keke, Ge Haoran, Zhang Qingjie, Wu Menghao, Tang Xinfeng, Wu Jinsong
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China.
Nano Lett. 2025 Jun 25;25(25):10246-10253. doi: 10.1021/acs.nanolett.5c02590. Epub 2025 Jun 12.
Octahedral MoTe is a nonpolar 1T' phase and transforms into polar T phase at ∼260 K, along with the change of the layer stacking order. However, as it is difficult to capture the interlayer sliding at atomic resolution, the polarization formation mechanism of MoTe by cooling to low temperature remains largely unclear. Here, we address the challenge by in situ cryo-(S)TEM to trace the interlayer sliding at the atomic level and the induced polarization in vdW-layered MoTe. When it is in the range of 300-193 K, we observed the step-by-step formation of the local T domain within the 1T'-I domain. Moreover, we present an atomic-scale observation of the disordered mixed stacking of 1T'/T phases at 110 K. Two possible sliding models are built with the sliding energy barriers (2.7 and 5.3 meV/u.c.), indicating thermally accessible sliding behavior. Our investigation of sliding-induced polarization provides meaningful insights for developing sliding ferroelectric-based nonvolatile memory devices.
八面体碲化钼是一种非极性的1T'相,在约260 K时会随着层堆积顺序的变化转变为极性T相。然而,由于难以在原子分辨率下捕捉层间滑动,通过冷却至低温形成碲化钼极化的机制仍不清楚。在此,我们通过原位低温(S)透射电子显微镜解决这一挑战,以追踪原子水平的层间滑动以及范德华层状碲化钼中诱导的极化。当温度在300 - 193 K范围内时,我们观察到在1T'-I域内局部T域的逐步形成。此外,我们展示了在110 K时1T'/T相无序混合堆积的原子尺度观察结果。构建了两个具有滑动能垒(2.7和5.3 meV/uc)的可能滑动模型,表明存在热可及的滑动行为。我们对滑动诱导极化的研究为开发基于滑动铁电的非易失性存储器件提供了有意义的见解。