Mallmann João, Chemin Jean-Baptiste, Cardenas Morcoso Drialys, Philippe Adrian-Marie, Bulou Simon, Chaabane Nihed, Rouillard Fabien, Choquet Patrick, Boscher Nicolas D
Luxembourg Institute of Science and Technology, Advanced Plasma and Vapor Deposition Processes Engineering, L-4362 Esch-sur-Alzette, Luxembourg.
CEA, Service de Recherche en Corrosion et Comportement des Matériaux, Université Paris Saclay, 91191 Gif-sur-Yvette, France.
ACS Appl Energy Mater. 2025 May 29;8(11):7038-7051. doi: 10.1021/acsaem.5c00280. eCollection 2025 Jun 9.
Crystalline and electrocatalytically active cobalt oxide (CoO) thin films were successfully synthesized under open-air conditions using atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with the Co-(acac) precursor. This study explored the influence of process parameters on the composition, crystallinity, and quality of the resulting thin films. It was found that the substrate temperature had a negligible effect due to the inherent heating by the plasma afterglow. The presence of atmospheric oxygen was identified as crucial for forming CoO thin films and eliminating residual impurities such as carbon and nitrogen, as demonstrated by experiments in O-free environments. The formation of CoO was attributed to radical-mediated reactions, where the reactive species generated in the plasma interacted with oxygen-rich molecules from the surrounding air. These findings provide valuable insights into the deposition mechanisms and catalytic potential of CoO thin films synthesized via AP-PECVD.
采用含钴乙酰丙酮配合物前驱体，通过常压等离子体增强化学气相沉积（AP-PECVD）在露天条件下成功合成了具有晶体结构和电催化活性的氧化钴（CoO）薄膜。本研究探讨了工艺参数对所得薄膜的成分、结晶度和质量的影响。结果发现，由于等离子体余辉的固有加热作用，衬底温度的影响可忽略不计。无氧环境下的实验表明，大气中的氧气对于形成CoO薄膜和消除碳、氮等残留杂质至关重要。CoO的形成归因于自由基介导的反应，即等离子体中产生的活性物种与周围空气中富含氧气的分子相互作用。这些发现为通过AP-PECVD合成的CoO薄膜的沉积机制和催化潜力提供了有价值的见解。
