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通过在近红外钙钛矿发光二极管中使用定向桥接分子实现改进的掩埋界面

Achieving Improved Buried Interface Enabled by Oriented Bridging Molecules in Near-Infrared Perovskite Light-Emitting Diodes.

作者信息

Gao Xin-Yuan, Wu Xin-Ye, Wang Wei-Jia, Xu Jin-Zhe, Liu Wei-Zhi, Xu Shuai-Hao, Peng Zhi-Yun, Zhou Dong-Ying, Liao Liang-Sheng

机构信息

Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, China.

College of Nano Science and Technology (CNST), Soochow University, Suzhou, Jiangsu 215123, China.

出版信息

ACS Appl Mater Interfaces. 2025 Jun 25;17(25):37292-37299. doi: 10.1021/acsami.5c06881. Epub 2025 Jun 13.

DOI:10.1021/acsami.5c06881
PMID:40512592
Abstract

Metal halide perovskites exhibit great promise for applications in solid-state lighting and flat-panel display technologies. Despite significant progress, the current strategies for achieving high-performance perovskite light-emitting diodes (PeLEDs) are largely confined to additive engineering and upper interface modifications, with little attention paid to the buried interface, which plays a crucial role in perovskite crystal growth and charge transport. Here, we demonstrate a novel buried interface modification strategy by substituting polyethylenimine ethoxylated (PEIE) with phosphorylethanolamine (PEA). PEA functions as a bridging molecule between ZnO and perovskite, with its phosphate group anchoring on ZnO and its amino group serving as the nucleation site for perovskite as well as passivating perovskite defects. Furthermore, PEA also passivates the surface defects of ZnO and modulates its energy levels, thereby enhancing electron injection. The resultant PeLEDs exhibit a peak EQE of up to 22.3% with reduced efficiency roll-off and prolonged half-lifetime, which is superior to that of conventional PeLEDs at a peak wavelength of 798 nm.

摘要

金属卤化物钙钛矿在固态照明和平板显示技术应用中展现出巨大潜力。尽管取得了显著进展,但目前实现高性能钙钛矿发光二极管(PeLEDs)的策略主要局限于添加剂工程和上界面修饰,而对在钙钛矿晶体生长和电荷传输中起关键作用的掩埋界面关注甚少。在此,我们展示了一种通过用磷酸乙醇胺(PEA)替代聚乙烯亚胺乙氧基化物(PEIE)的新型掩埋界面修饰策略。PEA作为ZnO和钙钛矿之间的桥接分子,其磷酸基团锚定在ZnO上,氨基作为钙钛矿的成核位点并钝化钙钛矿缺陷。此外,PEA还钝化ZnO的表面缺陷并调节其能级,从而增强电子注入。所得的PeLEDs在峰值波长798nm处表现出高达22.3%的峰值外量子效率(EQE),效率滚降降低且半衰期延长,优于传统PeLEDs。

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