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准一维电荷密度波绝缘体(TaSe)I中的光驱动导电性。

Light-driven conductivity in Quasi-one-dimensional charge density wave insulator (TaSe)I.

作者信息

Xiao Zhenyang, Guo Junqinq, Liu Guangjian, Yuan Jiaren, Liao Xiaxia, Zhou Yangbo

机构信息

School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China.

Jiangxi Provincial Key Laboratory of Photodetectors, Nanchang University, Nanchang, Jiangxi 330031, P.R. China.

出版信息

iScience. 2025 May 12;28(6):112647. doi: 10.1016/j.isci.2025.112647. eCollection 2025 Jun 20.

Abstract

Charge density waves (CDWs) represent a fundamental phenomenon in condensed matter physics with profound implications for quantum materials research. Here, we present a systematic investigation of light-driven transport properties in quasi-one-dimensional (TaSe)I nanoribbons at cryogenic temperatures. We demonstrate a pronounced photocurrent response below 80 K, which induces a transition from the CDW-stabilized insulating state to a conductive state. Remarkably, the generated photocurrent exhibits a broadband response behavior from 450 nm to 1,550 nm, with a polarization selectivity and fast response time (<100 μs). Such unconventional optoelectronic response can be attributed to the existence of the CDW gap with modulations to structural incommensurability under light illumination. Our findings enhance the fundamental understanding of CDW systems, while establishing promising avenues for developing advanced optoelectronic technologies.

摘要

电荷密度波(CDW)是凝聚态物理中的一种基本现象,对量子材料研究具有深远影响。在此,我们展示了在低温下对准一维(TaSe)I纳米带中光驱动输运特性的系统研究。我们证明了在80K以下有明显的光电流响应,该响应促使从CDW稳定的绝缘态转变为导电态。值得注意的是,所产生的光电流在450nm至1550nm范围内呈现宽带响应行为,具有偏振选择性和快速响应时间(<100μs)。这种非常规的光电响应可归因于CDW能隙的存在以及光照下结构失配的调制。我们的发现增进了对CDW系统的基本理解,同时为开发先进的光电技术开辟了有前景的途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/48ce/12166713/31282450a595/fx1.jpg

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