Wang Yongxin, Shi Yunhui, Cheng Jiabao, Xu Yao, Wang Yizhan, Qiu Jiawei
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130, People's Republic of China.
Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology, Tianjin, 300130, People's Republic of China.
Phys Chem Chem Phys. 2025 Jun 25;27(25):13213-13233. doi: 10.1039/d5cp00778j.
Chemical mechanical polishing (CMP) is a critical technique that combines chemical etching and mechanical grinding to achieve atomic-level surface planarization and eliminate subsurface damage in various materials, playing a key role in wafer thinning and smoothing. CeO abrasives, owing to their unique electronic structure and moderate chemical reactivity, exhibit excellent properties such as high polishing rate, reactivity, and selectivity. With advancements in manufacturing processes and the growing demand for ultra-flat surfaces, the preparation and application of CeO-based abrasives in CMP have emerged as key research areas. This review paper provides an overview of the synthesis methods for typical CeO-based abrasives and their applications. Additionally, the application of CeO-based abrasives in CMP slurries is discussed, focusing on their use in polishing silicon-based materials and other non-silicon-based materials. Finally, the common challenges associated with CeO-based abrasives in CMP are summarized, and future directions and potential advancements in this field are prospected.
化学机械抛光（CMP）是一种关键技术，它将化学蚀刻和机械研磨相结合，以实现原子级的表面平坦化，并消除各种材料中的亚表面损伤，在晶圆减薄和平整过程中发挥着关键作用。氧化铈磨料由于其独特的电子结构和适度的化学反应性，具有诸如高抛光速率、反应性和选择性等优异性能。随着制造工艺的进步以及对超平坦表面需求的不断增加，基于氧化铈的磨料在化学机械抛光中的制备和应用已成为关键研究领域。这篇综述文章概述了典型的基于氧化铈的磨料的合成方法及其应用。此外，还讨论了基于氧化铈的磨料在化学机械抛光浆料中的应用，重点关注其在抛光硅基材料和其他非硅基材料中的应用。最后，总结了基于氧化铈的磨料在化学机械抛光中面临的常见挑战，并展望了该领域未来的发展方向和潜在进展。
