Ashihara Kosuke, Asano Takaki, Takeuchi Kanako, Noma Kosuke, Tsumura Miyuki, Wang Wenjie, Lei Wei-Te, Higo Hisao, Kubo Toshio, Mizoguchi Yoko, Karakawa Shuhei, Cobat Aurélie, Conil Clément, Toyofuku Etsushi, Sekine Akimasa, Imai Kohsuke, Bogunovic Dusan, Casanova Jean-Laurent, Ku Cheng-Lung, Béziat Vivien, Okada Satoshi
Department of Pediatrics, Hiroshima University Graduate School of Biomedical and Health Sciences, Hiroshima, Japan.
Department of Radiation Biophysics, Research Institute for Radiation Biology and Medicine, Hiroshima University, Hiroshima, Japan.
JCI Insight. 2025 Jun 17;10(14). doi: 10.1172/jci.insight.190065. eCollection 2025 Jul 22.
Loss-of-function (LOF) variants in IL6ST, encoding GP130, can cause hyper-IgE syndrome (HIES). Monoallelic LOF variants in IL6ST lead to HIES when located in the intracellular domain downstream of box 1/2 and upstream of the STAT3 phosphorylation sites and the recycling motif, due to their dominant negative (DN) activity. In this region, 2 previously unreported IL6ST variants, p.K702Sfs7* and p.Y759Wfs26*, were identified in 2 families with autosomal dominant (AD) HIES. Both variants were LOF and exhibited DN effects, leading to the accumulation of mutant GP130 on the cell surface. The p.K702Sfs7* mutation was the most upstream N-terminal mutation linked to HIES caused by heterozygous IL6ST variants. Comprehensive screening of IL6ST mutants revealed that most premature terminations downstream of amino acid F641, at the end of the transmembrane domain, resulted in LOF and DN effects via GP130 accumulation on the cell surface. The absence of the recycling motif (positions 782-787) in surface-expressed LOF GP130 led to its accumulation, contributing to the DN effect. The importance of intracellular truncating IL6ST variants can possibly be predicted based on the location of the premature stop codon. GP130 accumulation on the cell surface is a characteristic and potentially diagnostic finding in patients with HIES with heterozygous IL6ST variants.
编码 GP130 的 IL6ST 功能丧失(LOF)变体可导致高 IgE 综合征(HIES)。当 IL6ST 的单等位基因 LOF 变体位于框 1/2 下游、STAT3 磷酸化位点和再循环基序上游的细胞内结构域时,由于其显性负性(DN)活性,会导致 HIES。在该区域,在 2 个常染色体显性(AD)HIES 家族中鉴定出 2 个先前未报道的 IL6ST 变体,即 p.K702Sfs7* 和 p.Y759Wfs26*。这两种变体均为 LOF 且表现出 DN 效应,导致突变型 GP130 在细胞表面积累。p.K702Sfs7* 突变是与杂合性 IL6ST 变体引起的 HIES 相关的最上游 N 端突变。对 IL6ST 突变体的全面筛选显示,跨膜结构域末端氨基酸 F641 下游的大多数过早终止通过 GP130 在细胞表面的积累导致 LOF 和 DN 效应。表面表达的 LOF GP130 中缺乏再循环基序(位置 782 - 787)导致其积累,促成了 DN 效应。细胞内截短的 IL6ST 变体的重要性可能可以根据过早终止密码子的位置来预测。GP130 在细胞表面的积累是具有杂合性 IL6ST 变体的 HIES 患者的一个特征性且可能具有诊断意义的发现。