Kang Yu, Zhai Xingyu, Yang Quan, Qiao Baoshi, Bian Zheng, Chen Haohan, Hu Huan, Xu Yang, Tian Ming, Wan Neng, Chen Wenchao, Chai Yang, Zhao Yuda, Yu Bin
College of Integrated Circuits, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China.
Zhejiang University - University of Illinois Urbana-Champaign Institute (ZJU-UIUC Institute), Zhejiang University, 3 Haining 14400, Hangzhou, China.
Innovation (Camb). 2025 Mar 18;6(6):100885. doi: 10.1016/j.xinn.2025.100885. eCollection 2025 Jun 2.
Ultralow-power non-volatile memristors are key elements in electronics. Generally, power reduction of memristors compromises data retention, a challenge known as the "power-retention dilemma," due to the stochastic formation of conductive dendrites in resistive-switching materials. Here, we report the results of conductive dendrite engineering in single-crystalline two-dimensional (2D) dielectrics in which directional control of filamentary distribution is possible. We find that the single-vacancy density (n) of single-crystalline hexagonal boron nitride (h-BN) plays an essential role in regulating conductive dendrite growth, supported by scanning joule expansion microscopy (SJEM). With optimized n, random dendrite growth is largely limited, and electrons hop between the neighboring Ag nanoclusters in vertical channels. The corresponding model was established to probe the relationship between n and memristor operating voltage. The conductive channel confinement in the vertical orientation contributes to long-retention non-volatile memristors with ultralow switch voltages (set: 26 mV; reset: -135 mV), excellent power efficiency (4 fW standby and a switching energy of 72 pJ) while keeping a high on/off resistance ratio of 10. Even at a record-low compliance current of 10 nA, memristors retains very robust non-volatile, multiple resistive states with an operating voltage less than 120 mV (the per-transition power low as 900 pW).
超低功耗非易失性忆阻器是电子学中的关键元件。一般来说，忆阻器的功耗降低会损害数据保持能力，这是一个被称为“功耗-保持困境”的挑战，因为电阻开关材料中导电树枝状晶体的随机形成。在此，我们报告了在单晶二维（2D）电介质中进行导电树枝状晶体工程的结果，其中丝状分布的方向控制是可能的。我们发现，单晶六方氮化硼（h-BN）的单空位密度（n）在调节导电树枝状晶体生长中起着至关重要的作用，扫描焦耳膨胀显微镜（SJEM）证实了这一点。通过优化n，随机树枝状晶体生长在很大程度上受到限制，电子在垂直通道中的相邻银纳米团簇之间跳跃。建立了相应模型以探究n与忆阻器工作电压之间的关系。垂直方向上的导电通道限制有助于实现具有超低开关电压（设置：26 mV；重置：-135 mV）、优异功率效率（4 fW待机和72 pJ的开关能量）的长保持非易失性忆阻器，同时保持10的高开/关电阻比。即使在创纪录的低顺应电流10 nA下，忆阻器仍能保持非常稳健的非易失性、多个电阻状态，工作电压小于120 mV（每次转换功率低至900 pW）。
