Sonkar Rahul, Boro Bitopan, Pandey Anand, Ghosh Mritunjoy Prasad, Chowdhury Devasish
Material Nanochemistry Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology Paschim Boragaon, Garchuk Guwahati-781035 Assam India
Academy of Scientific and Innovative Research (AcSIR) Ghaziabad-201002 India.
RSC Adv. 2025 Jun 17;15(26):20589-20604. doi: 10.1039/d5ra03972j. eCollection 2025 Jun 16.
In order to satisfy the increasing demand for affordable photodetectors in the sectors of flexible electronics and contemporary medical devices in this decade, researchers are looking for efficient semiconducting nanomaterials globally. Ag-doped SnO quantum dots (QDs) with varying Ag ion concentrations were synthesized chemical co-precipitation for efficient photodetector fabrication. The impact of Ag dopants on SnO QDs properties was analyzed through multiple characterization techniques. X-ray diffraction and Raman spectra confirmed an impurity-free crystal structure. Crystallite sizes (2.9-3.4 nm), calculated using Scherrer's formula, were below the Bohr excitonic diameter, validating their quantum dot nature. TEM images aligned with crystallite sizes, further confirming QD formation. The observed blue shift in band gaps with increasing Ag dopants is attributed to quantum confinement due to the reduction in mean particle size. Theoretically, the estimated values of absorption cross sections and electric field intensity of SnO QDs and Ag-doped SnO QDs using the finite time domain method were found to be in harmony with UV-Vis spectroscopy results. The obtained FTIR spectra of all the QDs demonstrated distinct peaks corresponding to different chemical bonds, further validated the phase purity. Ag-doped SnO QDs show lower PL intensity than pure SnO, indicating better charge separation and less recombination. Including photodetector application, the highest Ag-doped SnO QD sample is expected to have more active sites and be more suitable for various applications, such as photocatalytic and antioxidant capabilities, because of its higher specific surface area. Room temperature Hall effect experiments revealed that the pure SnO QDs showed the p-type semiconducting nature, whereas, with the addition of metal Ag ions, electrons became the majority charge carriers and the doped samples turned into n-type semiconductors. We have fabricated photodetectors using as-prepared samples and found that 6% Ag-doped SnO QDs showed better performance when compared with the other two samples. In addition to that, the free-radical scavenging activities of all the QDs were determined and it was found that SnO QDs doped with Ag ions have better antioxidant properties than pure SnO QDs. Consequently, these Ag-doped SnO QDs were found to be effective for photodetector application and reducing the oxidative stress.
为了满足本十年中柔性电子和当代医疗设备领域对经济实惠的光电探测器日益增长的需求,全球的研究人员都在寻找高效的半导体纳米材料。通过化学共沉淀法合成了具有不同银离子浓度的银掺杂二氧化锡量子点(QDs),用于制造高效光电探测器。通过多种表征技术分析了银掺杂剂对二氧化锡量子点性质的影响。X射线衍射和拉曼光谱证实了其无杂质的晶体结构。使用谢乐公式计算出的微晶尺寸(2.9 - 3.4纳米)低于玻尔激子直径,验证了它们的量子点性质。透射电子显微镜(TEM)图像与微晶尺寸相符,进一步证实了量子点的形成。随着银掺杂剂的增加,观察到的带隙蓝移归因于平均粒径减小导致的量子限制效应。理论上,使用有限时域方法估计的二氧化锡量子点和银掺杂二氧化锡量子点的吸收截面和电场强度值与紫外可见光谱结果一致。所有量子点获得的傅里叶变换红外光谱(FTIR)显示出对应于不同化学键的明显峰,进一步验证了相纯度。银掺杂二氧化锡量子点的光致发光(PL)强度低于纯二氧化锡,表明电荷分离更好且复合更少。包括光电探测器应用在内,由于其较高的比表面积,最高银掺杂的二氧化锡量子点样品预计具有更多活性位点,更适合各种应用,如光催化和抗氧化能力。室温霍尔效应实验表明,纯二氧化锡量子点表现出p型半导体性质,而随着金属银离子的加入,电子成为多数载流子,掺杂样品转变为n型半导体。我们使用制备好的样品制造了光电探测器,发现6%银掺杂的二氧化锡量子点与其他两个样品相比表现出更好的性能。此外,还测定了所有量子点的自由基清除活性,发现银离子掺杂的二氧化锡量子点比纯二氧化锡量子点具有更好的抗氧化性能。因此,发现这些银掺杂二氧化锡量子点对光电探测器应用和降低氧化应激有效。
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