Nie Wendong, Liang Sisi, Chen Dejian, Hu Jie, Wang Zihao, Pan Zixin, Yang Hongyi, Lin Fulin, Yi Xiaodong, Zhu Haomiao
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian350002, China.
Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Research Center of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian361021, China.
ACS Appl Mater Interfaces. 2025 Jul 2;17(26):38255-38268. doi: 10.1021/acsami.5c08213. Epub 2025 Jun 20.
Ni-doped inorganic crystals are promising for generating broadband emissions from 1000 to 1700 nm, which are crucial for advancing NIR light sources. However, their commercial applications have been hindered due to their weak absorption. Herein, the LiAlO crystal is present as the host for Cr and Ni ions due to its high density of available doping sites (Al) per unit volume (0.048/Å) for Cr sensitizers. By heavily increasing the doping concentration of Cr, an unprecedented broad emission band peaking at 773 nm emerges, enhancing the spectral overlap between the emission of Cr and absorption of Ni, thus boosting the energy transfer efficiency from Cr to Ni. This accelerated energy transfer rate competes favorably against nonradiative processes, allowing higher concentrations of Cr without any photoluminescence quenching. Moreover, by substituting Ga for Al, the excitation peak is successfully tuned from 405 to 445 nm, aligning perfectly with commercial blue diode chips. As a result, the optimal LiAlGaO: 0.26Cr, 0.1Ni phosphor exhibits a broadband emission ranging from 950 to 1600 nm, achieving internal/external photoluminescence quantum yields up to 94.12 and 72.62%, respectively. The application demonstration of packaged lighting devices shows its great potential in the fields of poultry farming and life science.
掺镍无机晶体有望产生1000至1700纳米的宽带发射，这对于推进近红外光源至关重要。然而，由于其吸收较弱，它们的商业应用受到了阻碍。在此，LiAlO晶体作为Cr和Ni离子的基质，因为其每单位体积（0.048/Å）有高密度的可供Cr敏化剂掺杂的位点（Al）。通过大幅提高Cr的掺杂浓度，出现了一个前所未有的在773纳米处达到峰值的宽发射带，增强了Cr发射与Ni吸收之间的光谱重叠，从而提高了从Cr到Ni的能量转移效率。这种加速的能量转移速率与非辐射过程相比具有优势，允许更高浓度的Cr而不会出现任何光致发光猝灭。此外，通过用Ga替代Al，激发峰成功地从405纳米调谐到445纳米，与商用蓝色二极管芯片完美匹配。结果，最佳的LiAlGaO:0.26Cr,0.1Ni荧光粉呈现出950至1600纳米的宽带发射，内/外光致发光量子产率分别高达94.12%和72.62%。封装照明器件的应用示范表明了其在家禽养殖和生命科学领域的巨大潜力。
