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用于近红外发光二极管应用的ZnGaAlSbO∶Cr荧光粉的宽带发射工程

Engineering Broadband Emission of ZnGaAlSbO∶Cr Phosphors for Near-Infrared LED Application.

作者信息

Zhang Xiaowei, Sun Dashuai, Lu Zheng, Luo Pengcheng, Zhou Luhui, Ye Xinyu, You Hongpeng

机构信息

College of Rare Earths, Jiangxi University of Science and Technology, Ganzhou, Jiangxi, 341000, P. R. China.

Key Laboratory of Rare Earths and Institute of Material and Chemistry, Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, 341000, P. R. China.

出版信息

Small. 2025 Jun;21(25):e2503049. doi: 10.1002/smll.202503049. Epub 2025 May 5.

DOI:10.1002/smll.202503049
PMID:40321099
Abstract

In phosphor-converted light-emitting diode (pc-LED)-based near-infrared light sources for biochemical analysis and medical diagnostics, phosphors with broadband near-infrared (NIR) emission play an important role, and obtaining such phosphors is a great challenge. Herein, efficient broadband NIR-emitting ZnGaAlSbO:Cr phosphors are developed by introducing Al to gradually replace Ga in the host ZnGaSbO through crystal engineering. Spectral analysis and densitometric calculations show that this homogeneous cation substitution strategy optimizes the local lattice environment and significantly suppresses the nonradiative relaxation of the Cr emission centers, thus exhibiting strong broadband NIR emission properties. In addition, Cr ions show varied low-temperature emissions with notable temperature sensitivity differences among centers. At 90 K, the material achieves a maximum relative sensitivity of 1.45% K, highlighting its potential as a thermosensitive material for low-temperature applications and temperature sensing. The NIR LED light source fabricated based on this material shows a significant response to different liquids in transmission spectral analysis, suggesting its potential for important applications in the identification of organic compounds.

摘要

在用于生化分析和医学诊断的基于磷光转换发光二极管(pc-LED)的近红外光源中,具有宽带近红外(NIR)发射的磷光体起着重要作用,而获得此类磷光体是一项巨大挑战。在此,通过晶体工程将Al引入到主体ZnGaSbO中逐步取代Ga,从而开发出高效宽带近红外发射的ZnGaAlSbO:Cr磷光体。光谱分析和密度计算表明,这种均匀的阳离子取代策略优化了局部晶格环境,并显著抑制了Cr发射中心的非辐射弛豫,从而展现出强宽带近红外发射特性。此外,Cr离子表现出不同的低温发射,各中心之间具有显著的温度敏感性差异。在90K时,该材料实现了1.45% K的最大相对灵敏度,突出了其作为低温应用和温度传感热敏材料的潜力。基于该材料制备的近红外发光二极管光源在透射光谱分析中对不同液体表现出显著响应,表明其在有机化合物识别等重要应用中的潜力。

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