Masseroni Michele, Soltero Isaac, McHugh James G, Rozhansky Igor, Li Xue, Schmidhuber Alexander, Niese Markus, Taniguchi Takashi, Watanabe Kenji, Fal'ko Vladimir I, Ihn Thomas, Ensslin Klaus
Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland.
Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom.
Nano Lett. 2025 Jul 2;25(26):10472-10477. doi: 10.1021/acs.nanolett.5c01998. Epub 2025 Jun 22.
Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the points, whereas in multilayers, they shift to the points, midway between the Γ and points. In this study, we conduct magnetotransport experiments to measure the occupation in the and valleys in four-layer molybdenum disulfide (MoS). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid · tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.
过渡金属二硫属化物（TMDs）由于其单层和体相结构在六角形布里渊区内带边位置的变化而引起了广泛的研究兴趣。在单层中，导带最小值位于Γ点，而在多层中，它们移至K点，即Γ点和K点之间的中点。在本研究中，我们进行了磁输运实验，以测量四层二硫化钼（MoS₂）中K和Γ谷中的占据情况。我们将实验结果与一个混合紧束缚模型相结合，该模型以自洽的方式考虑了层间屏蔽效应，从而证明了导带边的静电可调性。此外，我们将模型扩展到双层和三层MoS₂，协调了先前的实验结果，并量化了原子级薄的TMDs中带边的可调范围。
