Zhang Shuai, Lu Lifang, Kang Chenfei, Qu Hongfei, Zhao Xingchao, Xie Yujie, Ma Xiaoling, Zhuo Zuliang, Qi Guangyu, Fan Qunping, Yang Kaixuan, Zhang Fujun
Advanced Organic Materials and Devices Laboratory, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, People's Republic of China.
China Software Testing Center (Software and Integrated Circuit Promotion Center of the Ministry of Industry and Information Technology), Haidian District, Beijing 100048, People's Republic of China.
ACS Appl Mater Interfaces. 2025 Jul 9;17(27):39375-39382. doi: 10.1021/acsami.5c06461. Epub 2025 Jun 24.
Broadband photomultiplication-type organic photodetectors (PM-OPDs) were fabricated by employing a wide bandgap donor P3HT and narrow bandgap acceptor QxIC as the photoactive layers. The optimal weight ratio of P3HT to QxIC is adjusted as approximately 100:1 to achieve numerous isolated electron traps formed by P3HT/QxIC/P3HT and an efficient hole transport channel in the photoactive layers. The trapped photogenerated electrons in QxIC near the Al electrode will induce interfacial band bending for more efficient hole tunneling injection to obtain a large light current density (), resulting in the external quantum efficiency (EQE) over 100% of the PM-OPDs. The dark current density () of broadband PM-OPDs can be further suppressed by employing MPA2FPh-BT-BA as an interfacial layer instead of a PEDOT:PSS layer on the ITO electrode. The optimal PM-OPDs display a rather low of 5.7 × 10 A cm under a -8 V bias, which is lower than 5.3 × 10 A cm for PM-OPDs with PEDOT:PSS as an interfacial layer under the same bias. Additionally, the of broadband PM-OPDs exhibits a slightly decreased trend by using the MPA2FPh-BT-BA interfacial layer. The signal-to-noise ratio (SNR) of broadband PM-OPDs can be increased from 667 to 3788 by replacing PEDOT:PSS with MPA2FPh-BT-BA as the interfacial layer, benefiting from the markedly decreased and relatively high . The optimal broadband PM-OPDs exhibit EQE values of 8010% at 355 nm and 2170% at 835 nm, as well as specific detectivity values of 9.1 × 10 Jones at 355 nm and 5.8 × 10 Jones at 835 nm under a -8 V bias.
通过使用宽带隙供体P3HT和窄带隙受体QxIC作为光活性层来制备宽带光倍增型有机光电探测器（PM-OPD）。将P3HT与QxIC的最佳重量比调整为约100:1，以在光活性层中形成由P3HT/QxIC/P3HT形成的大量孤立电子陷阱和有效的空穴传输通道。在Al电极附近的QxIC中捕获的光生电子将诱导界面能带弯曲，以实现更有效的空穴隧穿注入，从而获得大的光电流密度（），导致PM-OPD的外量子效率（EQE）超过100%。通过使用MPA2FPh-BT-BA作为界面层而不是ITO电极上的PEDOT:PSS层，可以进一步抑制宽带PM-OPD的暗电流密度（）。最佳的PM-OPD在-8 V偏压下显示出相当低的5.7×10 A cm的，这低于在相同偏压下以PEDOT:PSS作为界面层的PM-OPD的5.3×10 A cm。此外，使用MPA2FPh-BT-BA界面层时，宽带PM-OPD的呈现出略微下降的趋势。通过用MPA2FPh-BT-BA代替PEDOT:PSS作为界面层，宽带PM-OPD的信噪比（SNR）可以从667提高到3788，这得益于显著降低的和相对较高的。最佳的宽带PM-OPD在355 nm处的EQE值为8010%，在835 nm处为2170%，并且在-8 V偏压下在355 nm处的比探测率值为9.1×10 Jones，在835 nm处为5.8×10 Jones。
