Wu Hao, Pan Jinyi, Wu Chao, Wang Jie, Jiang Chunyi, Guo Chenyu, Yu Zhihao, Wang Zhenyang, Du Sichao, Guo Daoyou, Hu Jun
National Engineering Research Center for Optical Instruments, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, P. R. China.
School of Information and Electrical Engineering, Hangzhou City University, Hangzhou, 310015, P. R. China.
Small. 2025 Aug;21(34):e2504173. doi: 10.1002/smll.202504173. Epub 2025 Jun 25.
Solar-blind photodetection plays a crucial role in environmental monitoring, corona detection, and covert battlefield communication due to its unique high signal-to-noise ratios in the UVC band. Aluminum quantum dots (AlQDs) emerge as promising optical materials owing to their extended photoresponse in the ultraviolet region, along with their low cost and compatibility with optoelectronic devices. Herein, an AlQDs-based cascade solar-blind photodetector is presented with enhanced sensitivity, achieved through the quantum confinement effect. By employing a gradient double-layer AlQDs stack integrated with β-Ga₂O₃, the heterojunction demonstrates a significantly suppressed dark current, reduced from 3 nA to 2 pA, and a spectral noise density of 2.8 × 10 A Hz⁻ compared to the single-layer device. The optimized photodetector achieves a high UV-vis rejection ratio (R/R) of 2.5 × 10, a specific detectivity of ≈2.3 × 10 Jones, a relatively fast response time of 25 ms, and a responsivity of 35.1 mA W under a 1 V bias. Furthermore, the device demonstrates robust interference-resistant imaging capabilities, enabling ultra-weak photodetection down to 23 nW cm. These results highlight the potential of AlQDs-based cascade devices for advanced solar-blind photodetection applications.
由于在紫外线C波段具有独特的高信噪比,日盲光电探测在环境监测、电晕检测和隐蔽战场通信中发挥着关键作用。铝量子点(AlQDs)因其在紫外区域的扩展光响应、低成本以及与光电器件的兼容性,成为有前景的光学材料。在此,通过量子限制效应,提出了一种基于AlQDs的级联日盲光电探测器,其灵敏度得到增强。通过采用与β-Ga₂O₃集成的梯度双层AlQDs堆栈,该异质结的暗电流显著抑制,从3 nA降至2 pA,与单层器件相比,光谱噪声密度为2.8×10 A Hz⁻ 。优化后的光电探测器实现了2.5×10的高紫外-可见光抑制比(R/R)、约2.3×10琼斯的比探测率、25 ms的相对快速响应时间以及1 V偏压下35.1 mA W的响应度。此外,该器件展示了强大的抗干扰成像能力,能够实现低至23 nW cm的超弱光电探测。这些结果突出了基于AlQDs的级联器件在先进日盲光电探测应用中的潜力。