Unlocking Superior Photodetection Properties of Electrodeposited MoS Quantum Dots.

Quantum dots (QDs) based on transition metal dichalcogenides such as MoS offer an alternative strategy to yield excellent optoelectronic properties and promote their photodetection performances. By synthesizing MoS QDs through a controlled electrodeposition process, their superior photodetection properties are unlocked, surpassing those reported in existing literature. Through comprehensive characterization and analysis, the successful fabrication of MoS QDs made of a mixture of metallic 1T-MoS and semiconductor 1T/2H-MoS is demonstrated. The photodetection response of MoS QDs samples shows a synergistic effect between the two nuances of MoS, achieving under a standard solar simulator, 758 A W and 5.2·10 Jones for the responsivity and the detectivity. Surprisingly, under UV excitation at 5 V bias for smaller MoS QDs, the device demonstrates impressive responsivity and detectivity reaching up to 1708.7 A W and 1.2·10 Jones, respectively as well as excellent external and internal quantum efficiencies of 5.4·10% and 7.8·10% establishing it as one of the highest-performing MoS-based photodetectors reported so far. This research not only sheds light on the potential of MoS QDs but also paves the way for their integration into photodetection technologies with unprecedented sensitivity.