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迈向新型自旋电子材料:镁基 - 赫斯勒(诺沃特尼 - 尤扎)化合物

Towards Novel Spintronic Materials: Mg-Based - Heusler (Nowotny-Juza) Compounds.

作者信息

Özdoğan Kemal, Galanakis Iosif

机构信息

Department of Physics, Yildiz Technical University, 34210 İstanbul, Turkey.

Department of Materials Science, School of Natural Sciences, University of Patras, GR-26504 Patra, Greece.

出版信息

Micromachines (Basel). 2025 May 31;16(6):674. doi: 10.3390/mi16060674.

Abstract

Heusler compounds and alloys constitute a burgeoning class of materials with exceptional properties, holding immense promise for advanced technologies. Electronic band structure calculations are instrumental in driving research in this field. Nowotny-Juza compounds are similar to Semi-Heusler compounds containing one instead of two transition metal atoms in their chemical formula. Recently, they have been widely referred to as "p0- or d0- Semi-Heusler compounds". Building upon our previous studies on p0- or d0- Semi-Heusler compounds featuring Li or K, we now explore a new class of d0- compounds incorporating alkaline earth metals and more specifically Mg which is well-known to occupy all possible sites in Heusler compounds. These compounds, with the general formula Mg(Ga, Ge, or As), where is a transition metal, are investigated for their structural, electronic, and magnetic properties, specifically within the context of the three possible C1b structures including also the effect of tetragonalization which is shown not to affect the equilibrium cubic type. Our findings demonstrate that a significant number of these compounds exhibit magnetic behavior, with several displaying half-metallicity, making them highly attractive for spintronic applications. This research provides a crucial foundation for future experimental investigations into these promising materials.

摘要

赫斯勒化合物和合金是一类新兴材料,具有卓越性能,在先进技术领域有着巨大潜力。电子能带结构计算对推动该领域研究至关重要。诺沃特尼 - 尤扎化合物类似于半赫斯勒化合物,其化学式中含有一个而非两个过渡金属原子。近来,它们被广泛称作“p0或d0半赫斯勒化合物”。基于我们先前对含锂或钾的p0或d0半赫斯勒化合物的研究,我们现在探索一类新的d0化合物,这类化合物包含碱土金属,更具体地说是镁,众所周知镁在赫斯勒化合物中能占据所有可能的位置。这些通式为Mg(Ga、Ge或As)(其中为过渡金属)的化合物,针对其结构、电子和磁性性质进行了研究,具体是在三种可能的C1b结构背景下,还包括四方畸变的影响,结果表明四方畸变不影响平衡立方结构类型。我们的研究结果表明,这些化合物中有相当数量表现出磁性行为,其中一些呈现半金属性,使其在自旋电子学应用中极具吸引力。这项研究为未来对这些有前景材料的实验研究提供了关键基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fad4/12195053/fa308804c154/micromachines-16-00674-g001.jpg

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