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经颅磁刺激左侧腹外侧前额叶皮层或右侧背外侧前额叶皮层会促进工作记忆中的遗忘。

Transcranial magnetic stimulation to left VLPFC or right DLPFC promotes forgetting in working memory.

作者信息

Qi Mingming, Sha Huiyan, Jing Jingyan, Gai Ru, Gao Heming

机构信息

School of Psychology, https://ror.org/04c3cgg32Liaoning Normal University, Dalian, China.

出版信息

Psychol Med. 2025 Jun 30;55:e183. doi: 10.1017/S0033291725100585.

Abstract

BACKGROUND

Individuals can intentionally process task-relevant information while ignoring task-irrelevant information. This study aims to investigate how to promote forgetting of task-irrelevant information through noninvasive brain stimulation, utilizing direct suppression and thought substitute inhibition mechanisms.

METHODS

Participants were cued to either remember task-relevant information while forgetting task-irrelevant information (IR condition) or to forget task-irrelevant items while remembering task-relevant information (IF condition). High-frequency rTMS was applied to activate the left ventrolateral prefrontal cortex (VLPFC,  = 32), right dorsolateral prefrontal cortex (DLPFC,  = 32), or vertex cortex (control condition,  = 32).

RESULTS

Compared to vertex stimulation, (1) The Left VLPFC stimulation promoted the memory of task-relevant information in the IR condition, and resulted in a memory deficit for the task-irrelevant information in the IF condition (active forgetting). (2) The Right DLPFC stimulation promoted the forgetting of task-irrelevant information in the IF condition (active forgetting) and facilitated the memory of task-relevant information in the IR condition.

CONCLUSIONS

Stimulating left VLPFC or right DLPFC can promote active forgetting. Noninvasive brain stimulation can effectively regulate memory control.

摘要

背景

个体能够在忽略任务无关信息的同时有意地处理与任务相关的信息。本研究旨在探讨如何通过非侵入性脑刺激,利用直接抑制和思维替代抑制机制来促进对任务无关信息的遗忘。

方法

参与者被提示要么在遗忘任务无关信息的同时记住任务相关信息(IR条件),要么在记住任务相关信息的同时遗忘任务无关项目(IF条件)。高频重复经颅磁刺激(rTMS)被用于激活左侧腹外侧前额叶皮层(VLPFC,n = 32)、右侧背外侧前额叶皮层(DLPFC,n = 32)或头顶皮层(对照条件,n = 32)。

结果

与头顶刺激相比,(1)左侧VLPFC刺激在IR条件下促进了对任务相关信息的记忆,并在IF条件下导致了对任务无关信息的记忆缺陷(主动遗忘)。(2)右侧DLPFC刺激在IF条件下促进了对任务无关信息的遗忘(主动遗忘),并在IR条件下促进了对任务相关信息的记忆。

结论

刺激左侧VLPFC或右侧DLPFC可促进主动遗忘。非侵入性脑刺激可有效调节记忆控制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ad/12234020/033a37904c21/S0033291725100585_fig1.jpg

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