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具有广角和动态可调性的电偶极子共振驱动太赫兹宽带吸收器。

Electric dipole resonance-driven terahertz broadband absorber with wide-angle and dynamic tunability.

作者信息

Zou Gengliang, Liu Tao, Wang Chunlan, Luo Chi, Qin Zihan, Ji Jiaying, Yi Zao

机构信息

School of Science, Xi'an Polytechnic University, Xi'an 710048, China.

School of Mathematics and Science, Southwest University of Science and Technology, Mianyang 621010, China.

出版信息

Dalton Trans. 2025 Jul 15;54(28):10898-10906. doi: 10.1039/d5dt01258a.

Abstract

To address the challenges of limited bandwidth and structural complexity in terahertz absorbers, this study proposes a vanadium dioxide (VO)-based broadband terahertz (THz) absorber driven by electric dipole resonance. The device achieves broadband absorption exceeding 90% within 3.55-9.95 THz, an absorption bandwidth of 6.4 THz and a fractional bandwidth reaching 94.81%. Through comprehensive analyses including impedance matching theory, multiple reflection interference theory, multipole decomposition, and electric field distribution, we confirm that the broadband absorption mechanism originates from electric dipole resonances excited at the structural edges of VO. Furthermore, the temperature-controlled phase transition properties of VO enable dynamic tuning capability. The devices exhibit excellent polarization insensitivity and wide-angle stability with a synergistic effect of structural symmetry and slit design, and maintain efficient broad absorption at 40° incidence. Finally, the devices were found to have good process tolerance by varying different structural parameters. This work provides a high-performance and integration-friendly solution for THz metamaterial absorbers, showing significant application potential in electromagnetic shielding, smart switching, and wavefront modulation.

摘要

为应对太赫兹吸收器中带宽有限和结构复杂的挑战,本研究提出了一种基于二氧化钒(VO)的、由电偶极共振驱动的宽带太赫兹(THz)吸收器。该器件在3.55 - 9.95太赫兹范围内实现了超过90%的宽带吸收,吸收带宽为6.4太赫兹,分数带宽达到94.81%。通过包括阻抗匹配理论、多次反射干涉理论、多极分解和电场分布在内的综合分析,我们证实宽带吸收机制源于VO结构边缘激发的电偶极共振。此外,VO的温控相变特性实现了动态调谐能力。这些器件通过结构对称性和狭缝设计的协同效应表现出优异的偏振不敏感性和广角稳定性,并在40°入射角下保持高效的宽带吸收。最后,通过改变不同的结构参数发现这些器件具有良好的工艺耐受性。这项工作为太赫兹超材料吸收器提供了一种高性能且易于集成的解决方案,在电磁屏蔽、智能开关和波前调制方面显示出巨大的应用潜力。

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