Li Chang, Lu Xueguang, Chen Kefan, Zhu Hongfu, Huang Wanxia
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, Sichuan China.
ACS Appl Mater Interfaces. 2025 Jul 2;17(26):38763-38772. doi: 10.1021/acsami.5c07903. Epub 2025 Jun 16.
Numerous functional materials have been investigated for impedance-matching-based terahertz (THz) antireflection; however, their practical utilization is significantly constrained by complex switching mechanisms, stringent excitation conditions, and challenging fabrication processes. In this study, we propose a novel method for THz wave amplitude modulation utilizing a VO/GST(GeSbTe) composite phase-change material interface, enabling efficient switching control and multiangle reflection modulation. By optimizing the device manufacturing process, we developed a modulation device that exhibits excellent antireflection performance at room temperature and can efficiently modulate the switching of THz signals. The unique advantages of this structure arise from the reversible phase transition properties of VO, which enable dynamic reflection modulation. This study goes beyond temperature-driven THz modulation by exploring the potential of current-driven dynamic control, significantly enhancing the device's modulation flexibility. Experimental results show that this composite phase-change interface structure achieves an amplitude modulation depth of 89.5% and exhibits superior reflection modulation performance across a wide angular range from 15 to 45°. Notably, the proposed structure has a broad response bandwidth spanning from 0.2 to 1.5 THz, ensuring robust performance over a wide spectrum of terahertz frequencies. This innovative structure not only offers new theoretical foundations and technical pathways for designing terahertz modulation devices but also establishes a solid foundation for expanding the application domains of terahertz technology.
人们已经研究了许多功能材料用于基于阻抗匹配的太赫兹（THz）抗反射；然而，它们的实际应用受到复杂的开关机制、严格的激发条件和具有挑战性的制造工艺的显著限制。在本研究中，我们提出了一种利用VO/GST（锗锑碲）复合相变材料界面进行太赫兹波幅度调制的新方法，能够实现高效的开关控制和多角度反射调制。通过优化器件制造工艺，我们开发了一种调制器件，该器件在室温下表现出优异的抗反射性能，并且能够有效地调制太赫兹信号的开关。这种结构的独特优势源于VO的可逆相变特性，这使得能够进行动态反射调制。本研究通过探索电流驱动动态控制的潜力，超越了温度驱动的太赫兹调制，显著提高了器件的调制灵活性。实验结果表明，这种复合相变界面结构实现了89.5%的幅度调制深度，并且在15°至45°的宽角度范围内表现出优异的反射调制性能。值得注意的是，所提出的结构具有从0.2到1.5 THz的宽响应带宽，确保在宽频谱的太赫兹频率上具有稳健的性能。这种创新结构不仅为太赫兹调制器件的设计提供了新的理论基础和技术途径，也为扩展太赫兹技术的应用领域奠定了坚实的基础。
