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基于阳极氧化电流曲线的不同孔径双层聚丙烯酸及其生长动力学

Double-layer PAA with different pore sizes and its growth kinetics based on anodizing current curves.

作者信息

Li Pengze, Qin Liyang, Li Bowen, Tang Yijing, Chen Lianyu, Song Ye, Zhu Xufei

机构信息

Key Laboratory of Soft Chemistry and Functional Materials of Education Ministry, Nanjing University of Science and Technology, Nanjing, 210094, China.

Nanjing Police University, Nanjing, 210013, China.

出版信息

Sci Rep. 2025 Jul 1;15(1):21818. doi: 10.1038/s41598-025-06899-6.

Abstract

The relationship between porous morphology and current-time curves cannot be explained by the field-assisted dissolution theory (FADT). Double-layer structures of porous anodic alumina (PAA) with different pore sizes were obtained by multi-step anodizations. These important results cannot be interpreted by the traditional FADT theory. Here, based on the theories of ionic current and electronic current, the always controversial growth kinetics of PAA are clarified by the current-time curves. The ionic current under high electric field is the driving force for the rapid growth of oxides, resulting in the decline of the current curve. The electronic current results in the rise of the current curve, and causes oxygen bubble to form the pore embryos. After the electrolyte enters the pore bottom, the thickness of the bottom barrier layer remains unchanged. Therefore, constant electronic current maintains the oxygen evolution and oxygen bubble mold. Constant ionic current maintains the oxide growth around the oxygen bubble mold at the pore bottom, and maintains the upward growth of PAA channel in the viscous flow mode. The field-assisted dissolution rate is much less than the rate of channel growth determined by the total current.

摘要

多孔形态与电流-时间曲线之间的关系无法用场辅助溶解理论(FADT)来解释。通过多步阳极氧化获得了具有不同孔径的多孔阳极氧化铝(PAA)的双层结构。这些重要结果无法用传统的FADT理论来解释。在此,基于离子电流和电子电流理论,通过电流-时间曲线阐明了一直存在争议的PAA生长动力学。高电场下的离子电流是氧化物快速生长的驱动力,导致电流曲线下降。电子电流导致电流曲线上升,并使氧气气泡形成孔胚。电解质进入孔底后,底部阻挡层的厚度保持不变。因此,恒定的电子电流维持析氧和氧气气泡模。恒定的离子电流维持孔底氧气气泡模周围的氧化物生长,并维持PAA通道在粘性流动模式下向上生长。场辅助溶解速率远小于由总电流决定的通道生长速率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dbd5/12216016/faa6b769ccc2/41598_2025_6899_Fig1_HTML.jpg

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